AUIRLS8409-7TRL

Single FETs, MOSFETs Overview

The AUIRLS8409-7TRL is an automotive-grade N-channel HEXFET power MOSFET in a D2PAK-7 package. It features a 40V drain-source breakdown voltage and ultra-low on-resistance, with maximum values of 0.75mΩ at VGS=10V and 0.85mΩ at VGS=5.5V. The device supports continuous currents up to 500A (silicon limited) or 240A (package limited). Key dynamic parameters include a total gate charge of 266nC max and fast switching times. It operates from -55°C to +175°C junction temperature and meets AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 for high reliability
• Advanced process technology enabling extremely low on-resistance
• Logic level gate drive capability for efficient control
• Fast switching speed with improved repetitive avalanche rating

Single FETs, MOSFETs Applications

• Electric Power Steering (EPS)
• Battery Switch
• Start/Stop Micro Hybrid systems
• Heavy Loads
• DC-DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '7TRL' corresponds to the Tape and Reel packaging configuration as defined in the datasheet ordering information. Confirm that the component meets the required automotive qualification standards for your specific application environment. Ensure compatibility with the D2PAK-7 footprint and thermal management requirements during integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive performance with low conduction losses. Consider the package-limited current of 240A versus the silicon-limited 500A when designing thermal solutions. Evaluate the gate charge and threshold voltage against your driver capabilities to ensure optimal switching efficiency and logic-level compatibility.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's automotive MOSFET portfolio, utilizing advanced processing techniques to achieve high power density. It is designed specifically for demanding automotive environments, offering enhanced reliability through features like lead-free construction and RoHS compliance while maintaining high thermal stability.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same D2PAK-7 form factor that meet identical AEC-Q101 and electrical specifications. Verify pinout compatibility and thermal resistance characteristics before substitution.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 500A based on silicon limitations, but it is package-limited to 240A due to wire bond constraints.

Is the device suitable for high-temperature operation?

Yes, the device is rated for a junction temperature range of -55°C to +175°C.

What is the maximum gate-to-source voltage?

The absolute maximum gate-to-source voltage is ±16V.