Single FETs, MOSFETs AUIRLU3110Z product image

AUIRLU3110Z

  • Description:MOSFET N-CH 100V 42A IPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:38788a4a9157 Category: Brand:

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AUIRLU3110Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 42A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLU3110Z

  • Description:MOSFET N-CH 100V 42A IPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:14mOhm @ 38A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:48 nC @ 4.5 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for AUIRLU3110Z

AUIRLU3110Z

Single FETs, MOSFETs Overview

The AUIRLU3110Z is a single N-channel HEXFET power MOSFET in an I-Pak (TO-251AA) package. It features a maximum drain-source voltage of 100 V and a typical on-resistance of 11 mΩ at VGS=10V, with a maximum rating of 14 mΩ. The device supports a continuous drain current of 63 A (silicon limited) or 42 A (package limited). Key electrical parameters include a gate threshold voltage range of 1.0 V to 2.5 V, total gate charge of 34 nC typ., and a maximum junction temperature of 175 °C. It is automotive qualified per AEC-Q101.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified according to AEC-Q101 standards for reliability
  • Logic level gate drive capability for direct microcontroller interfacing
  • Enhanced repetitive avalanche energy rating for robust operation
  • 175°C operating junction temperature capability

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side switching applications
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'Z' corresponds to the I-Pak tube packaging configuration. Confirm that the application environment meets the AEC-Q101 qualification requirements if automotive grade compliance is mandatory. Ensure thermal management designs account for the 1.05 K/W junction-to-case thermal resistance to maintain safe operating temperatures under load.

Single FETs, MOSFETs Selection Notes

Select this component when a logic-level N-channel MOSFET with high current handling is required in a TO-251AA footprint. The 11 mΩ typical on-resistance offers efficiency benefits over higher resistance alternatives. Consider the 42 A package-limited current rating against the 63 A silicon limit to determine appropriate heatsinking and PCB layout constraints for the target duty cycle.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family, utilizing advanced trench process technology to minimize on-resistance per silicon area. The AUIRLU3110Z shares core electrical characteristics with the D-Pak variant AUIRLR3110Z but utilizes the I-Pak package form factor. It is designed specifically for demanding automotive environments requiring high reliability and thermal stability.

Single FETs, MOSFETs Replacement Considerations

AUIRLR3110Z serves as a functional equivalent with identical electrical specifications but utilizes a D-Pak (TO-252) package instead of I-Pak. Verify pinout compatibility and physical footprint differences before substitution.

AUIRLU3110ZAUIRLU3110Z

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