BA982-GS18

RF Diode Overview

The BA982-GS18 is a silicon planar band switching diode manufactured by Vishay Semiconductors. It features a maximum reverse voltage of 35 V and a continuous forward current rating of 100 mA. The device exhibits low dynamic forward resistance, specified at a maximum of 0.7 Ω at 3 mA forward current and 200 MHz frequency. Diode capacitance is maintained at 1.25 pF under 3 V reverse bias at 100 MHz. The component operates within a junction temperature range up to 150 °C and is housed in a QuadroMELF SOD-80 package.

RF Diode Feature Summary

• Utilizes silicon planar technology for reliable switching performance
• Incorporates the QuadroMELF SOD-80 surface-mount package
• Qualified according to AEC-Q101 automotive standards
• Designed with low dynamic forward resistance and low diode capacitance

RF Diode Applications

• Band switching in VHF-tuners

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The GS18 suffix indicates packaging on a 13-inch reel containing 10,000 units per box. Confirm that the required electrical parameters align with the BA982 differentiation specifications rather than the BA983 variant. Ensure compliance with RoHS directives and WEEE regulations as stated in the manufacturer's material policy.

RF Diode Selection Notes

Select the BA982-GS18 when a maximum dynamic forward resistance of 0.7 Ω at 3 mA is required. This part differs from the BA983, which allows up to 1.2 Ω. Verify that the application environment remains within the specified storage temperature range of -55 °C to +150 °C. Ensure the circuit design accommodates the thermal characteristics, specifically the junction-to-ambient air resistance of 500 K/W on a standard printed circuit board.

RF Diode Part Context

This component belongs to the BA982/BA983 series of band switching diodes produced by Vishay Semiconductors. The series utilizes silicon planar technology and is available in the QuadroMELF SOD-80 case. Both variants share identical voltage ratings but differ in their dynamic forward resistance specifications. The product line is designed for high-frequency applications requiring low capacitance and high reverse impedance.

RF Diode Replacement Considerations

The BA983-GS18 serves as a functional substitute if higher dynamic forward resistance is acceptable. The BA982-GS08 offers identical electrical characteristics but utilizes 7-inch reels with 2,500 units per box. No other direct replacements are documented in the provided datasheet.

RF Diode FAQ

What is the maximum dynamic forward resistance for the BA982?

The maximum dynamic forward resistance for the BA982 is 0.7 Ω at a forward current of 3 mA and a frequency of 200 MHz.

How does the BA982 differ from the BA983?

The primary difference is the dynamic forward resistance; the BA982 has a maximum of 0.7 Ω, while the BA983 has a maximum of 1.2 Ω at 3 mA forward current.

What is the diode capacitance of the BA982 at 3 V reverse bias?

The diode capacitance (CD2) for the BA982 is typically 1.25 pF when measured at 3 V reverse bias and 100 MHz frequency.