BAP64-06W,115

RF Diode Overview

The BAP64-06W is a silicon PIN diode featuring two planar elements in a common anode configuration, housed in a SOT323 surface-mount package. It supports continuous reverse voltages up to 100 V and forward currents of 100 mA with total power dissipation limited to 240 mW at junction temperatures up to 150 °C. The device exhibits low capacitance, ranging from 0.23 pF to 0.52 pF depending on bias, and low series inductance of 1.6 nH. Designed for RF applications up to 3 GHz, it offers high isolation and controlled insertion loss characteristics suitable for precision signal processing.

RF Diode Feature Summary

• High voltage capability with current-controlled operation
• Low diode capacitance and forward resistance
• Low series inductance for high-frequency performance
• AEC-Q101 qualified for automotive reliability

RF Diode Applications

• RF attenuators
• RF switches

RF Diode Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm package type and marking codes. Ensure compliance with RoHS directives and REACH SVHC requirements as stated in the product data sheet. Confirm that the component meets AEC-Q101 standards if intended for automotive environments. Cross-reference the latest datasheet revision to ensure alignment with current manufacturing specifications.

RF Diode Selection Notes

Select this component for designs requiring dual PIN diodes in a compact SOT323 footprint. Evaluate thermal resistance and power dissipation limits relative to the expected operating temperature range. Consider the low series inductance and capacitance values when designing circuits operating near the 3 GHz upper frequency limit. Verify that the common anode configuration aligns with the circuit topology requirements.

RF Diode Part Context

This component belongs to NXP Semiconductors' portfolio of silicon PIN diodes designed for radio frequency applications. It utilizes planar technology to achieve consistent electrical characteristics within the small SMD plastic package. The product line emphasizes low parasitic effects to support high-speed switching and attenuation tasks in modern electronic systems.

RF Diode Replacement Considerations

Consult official NXP substitution guides for verified alternatives. Generic replacements may not match the specific AEC-Q101 qualification or the precise parasitic parameters required for high-frequency RF performance.

RF Diode FAQ

What is the maximum continuous reverse voltage rating?

The maximum continuous reverse voltage (VR) is rated at 100 V.

How does the diode capacitance vary with reverse voltage?

Diode capacitance decreases as reverse voltage increases, dropping from approximately 0.52 pF at 0 V to 0.23 pF at 20 V.

Is this component suitable for automotive applications?

Yes, the BAP64-06W is AEC-Q101 qualified, indicating suitability for automotive environments.