RF Diode BAR6404E6327HTSA1 product image

BAR6404E6327HTSA1

$0.11
  • Description:RF DIODE PIN 150V 250MW PG-SOT23
  • Series:-

SKU:c869dee9c20e Category: Brand:

  
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BAR6404E6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 150V 250MW PG-SOT23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR6404E6327HTSA1

  • Description:RF DIODE PIN 150V 250MW PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):150V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
  • Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR6404E6327HTSA1

BAR6404E6327HTSA1

RF Diode Overview

The BAR6404E6327HTSA1 is a low signal distortion, surface mount RF PIN diode configured as a series pair. Designed for applications requiring high voltage hold-off capabilities, it operates effectively at frequencies up to 3 GHz. The device features a nominal 50 μm I-region width and a typical carrier lifetime of 1.55 μs, resulting in low forward resistance and minimal signal distortion. It is housed in an industry-standard SOT-23-3 package with dimensions of 2.9 mm x 2.4 mm x 1 mm. The component supports a maximum reverse voltage of 150 V and a forward current of 100 mA, with a total power dissipation rating of 250 mW.

RF Diode Feature Summary

  • Optimized for low signal distortion in RF switches and attenuators
  • Very low capacitance characteristics at zero bias voltage
  • Low forward resistance ensuring efficient signal transmission
  • Pb-free, RoHS compliant, and halogen-free construction

RF Diode Applications

  • Low bias current RF switches
  • High-speed interface switches
  • Wireless communication systems
  • High speed data networks

RF Diode Procurement Notes

Verify the specific ordering code against official Infineon documentation to ensure correct configuration. Confirm that the SOT-23-3 package dimensions align with the PCB footprint requirements. Check for ESD handling precautions during storage and assembly. Ensure compliance with JEDEC qualification standards for industrial applications before integration into final designs.

RF Diode Selection Notes

Select this component when designing circuits that require low insertion loss and high isolation at frequencies up to 3 GHz. Consider the 150 V breakdown voltage for applications involving large RF voltages. Evaluate the thermal resistance of 95 K/W for heat dissipation needs. Verify that the 50 μm I-region width meets the specific carrier lifetime requirements for the target switching speed.

RF Diode Part Context

This part belongs to the BAR64 series of RF PIN diodes manufactured by Infineon Technologies. It is specifically engineered as a cost-optimized solution for surface mount applications. The series is designed to provide reliable performance in demanding RF environments while maintaining compact physical dimensions suitable for modern electronic devices.

RF Diode Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Ensure any replacement maintains the same SOT-23-3 package and electrical characteristics. Verify compatibility with existing circuit parameters before implementation.

BAR6404E6327HTSA1BAR6404E6327HTSA1
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