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BDW46 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 80V 15A TO-220. Review the specifications below when checking this part for your BOM.
The BDW46G is a PNP Darlington complementary silicon power transistor designed for general-purpose and low-speed switching applications. It features a maximum collector current of 15 A, a collector-emitter sustaining voltage of 80 V, and a total device dissipation of 85 W at 25°C case temperature. The component utilizes monolithic construction with built-in base-emitter shunt resistors and is housed in a TO-220 compact package.
Verify the specific suffix G indicates a Pb-Free and RoHS compliant package configuration. Confirm the ordering code matches the required PNP polarity variant within the BDW42/BDW46/BDW47 series. Ensure thermal management solutions align with the specified junction-to-case thermal resistance limits for reliable operation under load.
Select this component when a PNP Darlington configuration is required for medium-power applications. Consider the 80 V collector-emitter sustaining voltage limit and 15 A continuous collector current capability. Evaluate the thermal requirements against the 85 W dissipation rating and the necessity for built-in base-emitter shunt resistors to simplify drive circuit design.
This part belongs to the BDW42/BDW46/BDW47 Darlington complementary silicon power transistor series manufactured by onsemi. The series includes NPN (BDW42) and PNP (BDW46/BDW47) variants sharing similar physical packaging and operational characteristics, differentiated primarily by their voltage ratings and polarity.
Compatible substitutes include BDW42G (NPN) and BDW47G (PNP). Verify that the replacement maintains the required PNP polarity and meets the 80 V minimum collector-emitter sustaining voltage specification for the specific application environment.
The BDW46 has a minimum collector-emitter sustaining voltage (VCEO(sus)) of 80 Vdc at a collector current of 30 mAdc.
Yes, the device features monolithic construction with built-in base-emitter shunt resistors.
The typical DC current gain (hFE) is 2500 when the collector current is 5.0 Adc.
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