Single Bipolar Transistors BDW46 product image

BDW46

$0.39
  • Description:TRANS PNP DARL 80V 15A TO-220
  • Series:-

SKU:75281efea853 Category: Brand:

  
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BDW46 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 80V 15A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BDW46

  • Description:TRANS PNP DARL 80V 15A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):15 A
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 50mA, 10A
  • Current - Collector Cutoff (Max):2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 4V
  • Power - Max:85 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BDW46

BDW46

Single Bipolar Transistors Overview

The BDW46G is a PNP Darlington complementary silicon power transistor designed for general-purpose and low-speed switching applications. It features a maximum collector current of 15 A, a collector-emitter sustaining voltage of 80 V, and a total device dissipation of 85 W at 25°C case temperature. The component utilizes monolithic construction with built-in base-emitter shunt resistors and is housed in a TO-220 compact package.

Single Bipolar Transistors Feature Summary

  • High DC current gain typical value of 2500 at 5.0 A collector current
  • Monolithic construction incorporating built-in base-emitter shunt resistors
  • Low collector-emitter saturation voltage ensuring efficient switching performance

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Low speed switching applications
  • Complementary driver stages requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify the specific suffix G indicates a Pb-Free and RoHS compliant package configuration. Confirm the ordering code matches the required PNP polarity variant within the BDW42/BDW46/BDW47 series. Ensure thermal management solutions align with the specified junction-to-case thermal resistance limits for reliable operation under load.

Single Bipolar Transistors Selection Notes

Select this component when a PNP Darlington configuration is required for medium-power applications. Consider the 80 V collector-emitter sustaining voltage limit and 15 A continuous collector current capability. Evaluate the thermal requirements against the 85 W dissipation rating and the necessity for built-in base-emitter shunt resistors to simplify drive circuit design.

Single Bipolar Transistors Part Context

This part belongs to the BDW42/BDW46/BDW47 Darlington complementary silicon power transistor series manufactured by onsemi. The series includes NPN (BDW42) and PNP (BDW46/BDW47) variants sharing similar physical packaging and operational characteristics, differentiated primarily by their voltage ratings and polarity.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BDW42G (NPN) and BDW47G (PNP). Verify that the replacement maintains the required PNP polarity and meets the 80 V minimum collector-emitter sustaining voltage specification for the specific application environment.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter sustaining voltage for the BDW46?

The BDW46 has a minimum collector-emitter sustaining voltage (VCEO(sus)) of 80 Vdc at a collector current of 30 mAdc.

Does the BDW46G include internal components to assist with turn-off?

Yes, the device features monolithic construction with built-in base-emitter shunt resistors.

What is the typical DC current gain at 5.0 A?

The typical DC current gain (hFE) is 2500 when the collector current is 5.0 Adc.

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