BSA223SP

Single FETs, MOSFETs Overview

The BSA223SP is a P-channel enhancement mode MOSFET from Infineon's OptiMOS-P Small-Signal-Transistor series. It features a -20 V drain-source breakdown voltage and operates in the PG-SC-75 package. The device supports a continuous drain current of -0.39 A at 25°C, with a pulsed current capability of -1.56 A. Key electrical parameters include a maximum on-state resistance of 1.2 Ω at VGS = -4.5 V and 2.1 Ω at VGS = -2.5 V. It is rated for an avalanche energy of 1.4 mJ and a reverse diode dv/dt of -6 kV/µs. Thermal characteristics specify a junction-to-ambient thermal resistance of 500 K/W.

Single FETs, MOSFETs Feature Summary

• Super Logic Level operation rated for 2.5 V gate drive
• Avalanche rated for robustness against inductive load switching
• Reverse diode dv/dt rated to handle fast transient voltages
• Enhanced mode construction for standard logic interface compatibility

Single FETs, MOSFETs Applications

• Small-signal switching applications requiring low gate charge
• Logic level controlled power management circuits
• Automotive electronic systems utilizing small-signal transistors
• Industrial control interfaces operating within specified temperature ranges

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the marking code 'BPs' and package type PG-SC-75 against official Infineon documentation. Confirm that the ordering suffix matches the specific tape-and-reel or tube configuration required for your assembly process. Ensure compliance with the IEC climatic category 55/150/56 for environmental suitability in your target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with Super Logic Level capability is required for 2.5 V or 4.5 V gate drive signals. The device is suitable for designs needing avalanche ruggedness and high dv/dt tolerance. Consider the 500 K/W thermal resistance for heat dissipation calculations in free-air conditions without forced cooling.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-P Small-Signal-Transistor product line, designed for compact and efficient switching solutions. The series offers various voltage ratings and packages to support diverse industrial and automotive needs. The BSA223SP specifically addresses applications requiring reliable performance under transient conditions and low-voltage logic control.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other P-channel MOSFETs in the -20 V range featuring similar RDS(on) and package dimensions. Verify pinout compatibility with the PG-SC-75 footprint before substitution. Ensure replacement parts meet the same avalanche and dv/dt rating requirements for equivalent circuit protection.

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating for the BSA223SP?

The single pulse avalanche energy (EAS) is rated at 1.4 mJ under conditions of ID = -0.39 A, VDD = -10 V, and RGS = 25 Ω.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage (VGS(th)) typically decreases as temperature increases, ranging from -0.6 V to -1.2 V at 25°C, with negative temperature coefficient behavior observed up to 150°C.

What is the reverse diode dv/dt rating?

The reverse diode is rated for a dv/dt of -6 kV/µs when tested at IS = -0.39 A, VDS = -16 V, and di/dt = 200 A/µs with Tjmax set to 150°C.