BSC004NE2LS5ATMA1

Single FETs, MOSFETs Overview

The BSC004NE2LS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a 25 V drain-source breakdown voltage. It features a maximum on-resistance of 0.45 mΩ at 30 A and 10 V gate drive, or 0.85 mΩ at 4.5 V. The device supports a continuous drain current of up to 479 A at 25 °C case temperature and handles pulsed currents of 1914 A. Total gate charge is 135 nC at 4.5 V and 238 nC at 10 V. It operates within a junction temperature range of -55 °C to 175 °C and is housed in a PG-TDSON-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Optimized for OR-ing applications with very low on-resistance at reduced gate voltages
• Fully qualified according to JEDEC standards for industrial applications
• Features superior thermal resistance and includes an internal body diode
• 100% avalanche tested for enhanced reliability

Single FETs, MOSFETs Applications

• OR-ing controller circuits
• Industrial power distribution systems
• Low-voltage DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact Infineon part number BSC004NE2LS5ATMA1. Confirm the package type is PG-TDSON-8 and that the marking reads 04NE2LS5. Ensure the datasheet revision aligns with your design requirements. Check for RoHS compliance and halogen-free status as specified in the manufacturer documentation before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-voltage power paths requiring high current handling capabilities. The low RDS(on) minimizes conduction losses, while the specific gate threshold characteristics support efficient logic-level driving. Consider the thermal management requirements given the high current ratings and ensure the PCB layout accommodates the PG-TDSON-8 footprint for optimal heat dissipation.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS™ 5 family, designed for low-voltage switching applications. It utilizes advanced trench technology to achieve high performance in a compact surface-mount package. The series is engineered to provide robust solutions for modern electronic systems demanding efficiency and reliability in power management tasks.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for direct replacements. Cross-referencing requires matching voltage, current, and package specifications precisely.