BST16,115

Single Bipolar Transistors Overview

The BST16,115 is a PNP high-voltage bipolar junction transistor manufactured by NXP Semiconductors. It is housed in a SOT-89 surface-mount plastic package designed for robust performance in compact electronic circuits. The device supports a maximum collector-emitter voltage of 300 V and a continuous collector current of 200 mA. It features a power dissipation rating of 1.3 W and a transition frequency of 15 MHz. These specifications make it suitable for applications requiring reliable switching and amplification in high-voltage environments.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 300 V collector-emitter breakdown rating
• Surface-mount construction in a SOT-89 plastic package for automated assembly
• Low current operation optimized for specific switching applications

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply management systems
• General-purpose amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking and date code on the component body to ensure authenticity from NXP Semiconductors. Confirm that the SOT-89 package dimensions match your PCB footprint requirements. Check for any specific handling instructions regarding electrostatic discharge sensitivity during storage and installation processes.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 300 V rating is required in a surface-mount form factor. Ensure the application current does not exceed 200 mA continuously. Consider thermal management solutions if operating near the 1.3 W power dissipation limit. Verify compatibility with existing circuit designs before integration.

Single Bipolar Transistors Part Context

This part belongs to the BST series of high-voltage transistors from NXP. It serves as a PNP counterpart to NPN devices like the BST39 and BST40. The series is engineered for reliability in demanding electronic environments where space constraints and voltage isolation are critical design factors.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors with matching 300 V ratings and SOT-89 packages. Verify pinout compatibility and thermal characteristics before swapping components to maintain circuit integrity.