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BTA16-600BQ is listed in the Triacs range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is TRIAC 600V 16A IITO220E. Review the specifications below when checking this part for your BOM.
The BTA16-600BQ is a planar passivated four-quadrant triac manufactured by WeEn Semiconductors, housed in an internally insulated IITO-220 (SOT78D) plastic package. It features a rated repetitive peak off-state voltage (VDRM) of 600 V and an RMS on-state current (IT(RMS)) of 16 A at a mounting base temperature of 112 °C. The device supports a non-repetitive peak on-state current (ITSM) of 160 A for 20 ms pulses and 176 A for 16.7 ms pulses. It operates with a maximum junction temperature (Tj) of 150 °C and provides 2500 V (RMS) isolation between the pins and the external heatsink.
Verify the specific ordering suffix to confirm packaging format, as the datasheet lists BTA16-600BQ associated with horizontal rail pack distribution. Confirm RoHS compliance status and lead-free conversion dates through official manufacturer channels prior to procurement. Ensure the component matches the required industrial qualification standards for the intended application environment.
Select this component when high noise immunity is critical due to its elevated gate trigger current specifications. The internally insulated package is suitable for applications requiring galvanic isolation from the heatsink without additional insulators. Verify that the thermal resistance characteristics and mounting base temperature limits align with the system's cooling capabilities to maintain junction temperatures within the 150 °C maximum rating.
This part belongs to the BTA16 series of four-quadrant triacs produced by WeEn Semiconductors. The 'Q' suffix typically denotes specific packaging or handling variations compared to the standard BTA16-600B, though functional parameters remain consistent with the base model. It serves as a general-purpose power switching device within the company's discrete semiconductor portfolio.
Direct replacements must match the 600 V voltage rating, 16 A current capacity, and IITO-220 package outline. Verify that substitute components offer comparable dV/dt ratings and gate trigger currents to ensure equivalent noise immunity and switching performance in existing circuit designs.
The device provides an RMS isolation voltage of 2500 V between the pins and the external heatsink under clean and dust-free conditions.
The gate trigger current (IGT) ranges from 10 mA to 50 mA for Quadrants I, II, and III, and up to 70 mA for Quadrant IV (T2-, G+) at 25 °C.
The dIcom/dt is specified at a minimum of 2 A/ms under snubberless conditions with VD = 400 V and Tj = 150 °C.
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