BU806

Single Bipolar Transistors Overview

The BU806 is an NPN epitaxial silicon Darlington transistor designed for high voltage and fast switching applications. It features a collector-emitter voltage of 200 V, a continuous collector current of 8 A, and a maximum power dissipation of 60 W at 25°C case temperature. The device includes a built-in speed-up diode between the base and emitter to enhance switching performance. It is housed in a TO-220 package with three pins.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding circuit environments
• Fast switching characteristics optimized for horizontal output stages
• Integrated speed-up diode between base and emitter

Single Bipolar Transistors Applications

• Horizontal output stages of CRT video displays
• General purpose high voltage switching circuits
• Power amplifier driver stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor International or authorized successors like onsemi/NXP. Confirm the datasheet revision matches Rev. A from February 2000. Ensure the component is sourced from authorized distributors to avoid counterfeit parts, especially given the age of the specification document.

Single Bipolar Transistors Selection Notes

Select this component when a high voltage NPN Darlington configuration is required with integrated base-emitter protection. Compare against the BU807 if a lower 150V rating is acceptable. Consider thermal management requirements due to the 60W dissipation limit in the TO-220 package.

Single Bipolar Transistors Part Context

This part belongs to the BU806/807 series of medium voltage NPN fast-switching Darlington transistors. It is functionally similar to other high-voltage power transistors used in display technology. The series is characterized by its robust construction and specific inclusion of internal damping components.

Single Bipolar Transistors Replacement Considerations

BU807 (150V variant)

Single Bipolar Transistors FAQ

What is the function of the built-in diode?

The built-in diode is connected between the base and emitter to act as a speed-up diode, improving the switching performance of the transistor.

What is the maximum collector-base voltage?

The maximum collector-base voltage (VCBO) for the BU806 is 400 V.

Is this component suitable for life support devices?

No, Fairchild Semiconductor explicitly states that these products are not authorized for use as critical components in life support devices without express written approval.