Single Bipolar Transistors BUJD203A,127 product image

BUJD203A,127

$0.25
  • Description:TRANS NPN 425V 4A TO-220AB
  • Series:-

SKU:3df148246503 Category: Brand:

  
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BUJD203A,127 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is TRANS NPN 425V 4A TO-220AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BUJD203A,127

  • Description:TRANS NPN 425V 4A TO-220AB
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):425 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 600mA, 3A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:11 @ 2A, 5V
  • Power - Max:80 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BUJD203A,127

BUJD203A,127

Single Bipolar Transistors Overview

The BUJD203A,127 is an NPN silicon bipolar junction transistor manufactured by WeEn Semiconductors. It utilizes a TO-220F-3 through-hole package for single configuration mounting. Key electrical ratings include a maximum collector-emitter voltage of 425 V and a collector-base voltage of 850 V. The device supports a maximum DC collector current of 4 A with a power dissipation capacity of 26 W. Electrical characteristics specify a collector-emitter saturation voltage of 290 mV and a DC current gain range from 10 to 32. The component operates at temperatures up to +150 C.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 425 V collector-emitter rating
  • Robust thermal management via TO-220F-3 through-hole packaging
  • Low saturation voltage for efficient switching performance

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Power supply output stages
  • Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities combined with moderate current handling. The TO-220F-3 package facilitates direct heatsinking for thermal regulation. Ensure the application voltage remains below the 425 V limit and that base drive currents can support the specified hFE range for reliable saturation.

Single Bipolar Transistors Part Context

This part belongs to the WeEn Semiconductors discrete bipolar transistor portfolio. It serves as a specialized high-voltage switching element within their broader lineup of power semiconductors. The manufacturer integrates this component into industrial and consumer electronics supply chains, focusing on reliability and standard package compatibility for legacy and modern designs.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN transistors in the TO-220F-3 package offering similar 400 V+ ratings and 4 A current capacity. Verify pinout compatibility and thermal resistance values before substitution.

BUJD203A,127BUJD203A,127
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