BUT11ATU

Single Bipolar Transistors Overview

The BUT11ATU is an NPN silicon power transistor manufactured by Fairchild Semiconductor. It features a collector-emitter breakdown voltage of 450 V and a maximum continuous collector current of 5 A. The device is housed in a TO-220-3 through-hole package with the case connected to the drain. It is designed for high-voltage power switching applications.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding power environments
• Robust construction for reliable power switching operations
• Through-hole mounting for secure mechanical attachment

Single Bipolar Transistors Applications

• High voltage power switching circuits
• Industrial control systems requiring robust NPN transistors
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify component authenticity and datasheet revision status due to discontinuation history. Confirm package integrity and pin configuration against original specifications. Check for lead-free compliance markers if required by project standards. Ensure storage conditions maintain device reliability prior to assembly.

Single Bipolar Transistors Selection Notes

Select this component when a 450 V NPN transistor with 5 A current capacity is required. Consider the TO-220-3 package for thermal management needs. Evaluate alternative high-voltage NPN devices if current availability is constrained or if different pinout configurations are necessary for the specific circuit layout.

Single Bipolar Transistors Part Context

This part belongs to the BUT11 series of NPN silicon transistors from Fairchild Semiconductor. It shares characteristics with the BUT11TU variant but is distinguished by its specific packaging and manufacturing batch details. The series is engineered for general-purpose high-voltage switching tasks in industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitutes include BUT11TU. Verify electrical parameters and physical dimensions match before integration. Cross-reference datasheets for any minor differences in thermal resistance or pin assignments.