CP788X-2N2605-CT

Description：TRANS PNP 45V 0.03A DIE
Series：-

SKU:5fa050ba448e Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

CP788X-2N2605-CT is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS PNP 45V 0.03A DIE. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for CP788X-2N2605-CT

Description：TRANS PNP 45V 0.03A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
Transistor Type：-
Current - Collector (Ic) (Max)：30 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：10nA
DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 500µA, 5V
Power - Max：400 mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for CP788X-2N2605-CT

CP788X-2N2605-CT

Single Bipolar Transistors Overview

The CP788X-2N2605 is a silicon PNP general-purpose transistor die. It features a collector-base voltage of 60 V, collector-emitter voltage of 45 V, and emitter-base voltage of 6.0 V. The continuous collector current rating is 30 mA. Operating junction temperature ranges from -65 to +150 °C. Electrical characteristics include a DC current gain (hFE) of 100 to 300 at IC=10μA, and up to 600 at IC=10mA. Transition frequency (fT) is 30 MHz. Collector-base leakage current is 10 nA at 45 V.

Single Bipolar Transistors Feature Summary

Silicon PNP construction for general-purpose applications
High operating junction temperature capability up to +150 °C
Low collector-base leakage current specification
Optimized for high-frequency performance with 30 MHz transition frequency

Single Bipolar Transistors Applications

General-purpose switching circuits
Amplifier stages requiring PNP topology
High-temperature electronic environments

Single Bipolar Transistors Procurement Notes

Verify the specific packaging suffix required for your assembly process. Options include unsawn wafers, sawn wafers on plastic rings, or singulated bare dies in waffle trays. Confirm plating requirements, such as Tin/Lead or Lead-Free finishes, by checking the ordering suffix specifications provided in the manufacturer documentation before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a discrete PNP die is needed rather than a packaged transistor. Ensure the design accommodates wire bonding due to the exposed base and emitter pads. Verify that the 30 mA current limit and 45 V breakdown voltages meet the circuit requirements. Consider thermal management capabilities given the wide operating temperature range specified for the device.

Single Bipolar Transistors Part Context

This part is a bare semiconductor die manufactured by Central Semiconductor Corp. It corresponds to the 2N2605 transistor type but is supplied without an external package. It is intended for custom packaging or hybrid integrated circuit manufacturing processes where direct die attachment is utilized.

Single Bipolar Transistors Replacement Considerations

Direct replacement requires matching the 2N2605 electrical profile. Verify compatibility with existing wire bonding tools and pad layouts. Substitutes must offer similar voltage ratings and current handling capabilities for PNP silicon die applications.