CVJ10F30,LF

Diode Arrays Overview

The CVJ10F30 is a silicon epitaxial Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It features a UFV package with two anodes and two cathodes. The device supports a peak reverse voltage of 32 V and a continuous average rectified current of 1 A per diode. Electrical characteristics include a typical forward voltage of 0.47 V at 1 A and a maximum reverse current of 50 µA at 30 V. The component operates within a junction temperature range up to 125 °C.

Diode Arrays Feature Summary

• Low forward voltage drop for high efficiency
• High-speed switching capability
• Dual configuration in compact surface-mount package

Diode Arrays Applications

• High-speed switching circuits
• DC-DC converters
• Chopper regulators

Diode Arrays Procurement Notes

Verify the specific manufacturer part number against official Toshiba Semiconductor and Storage documentation to ensure authenticity. Confirm that the received components match the marking code SB1 and the UFV package type. Review the latest datasheet revision for any updates to absolute maximum ratings or electrical characteristics before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage and fast switching speeds. Consider the thermal implications of Schottky barrier diodes, as they exhibit higher reverse leakage currents compared to other diode types. Ensure adequate thermal design to prevent thermal runaway under high-temperature and high-voltage conditions, referencing the Toshiba Semiconductor Reliability Handbook for derating guidelines.

Diode Arrays Part Context

The CVJ10F30 belongs to the category of silicon epitaxial Schottky barrier diodes. It is designed for surface-mount technology using the UFV package. Commercial production for this component began in March 2011. It serves as a discrete semiconductor solution for power management and signal switching tasks where low loss and speed are critical.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Toshiba Semiconductor and Storage resources or authorized distributors for verified cross-reference information when evaluating alternative components.

Diode Arrays FAQ

What is the typical forward voltage of the CVJ10F30?

The typical forward voltage (VF) is 0.47 V when tested at a forward current (IF) of 1 A.

How does the CVJ10F30 handle reverse leakage current?

Schottky barrier diodes like the CVJ10F30 have higher reverse leakage than other diode types. The maximum reverse current is specified as 50 µA at a reverse voltage of 30 V.

What is the maximum operating junction temperature?

The maximum junction temperature (Tj) rating for the CVJ10F30 is 125 °C.