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DGSK40-025A is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE ARR SCHOT 250V 18A TO2203. Review the specifications below when checking this part for your BOM.
The DGSK40-025A is a Gallium Arsenide Schottky rectifier featuring a common cathode configuration. It supports an average forward current of 18 A at 25°C and withstands a repetitive peak reverse voltage of 250 V. The device exhibits a maximum forward voltage of 1.5 V at 7.5 A and 25°C, with a junction capacitance of 26 pF. It operates within a temperature range of -55°C to +175°C and utilizes TO-220AC or TO-252 packages.
Verify the specific package variant (TO-220AC or TO-252) required for your design, as both are available under this part number series. Confirm that the GaAs material properties align with your thermal management strategy, particularly regarding the 48 W power dissipation limit at 25°C case temperature. Ensure mounting torque specifications are strictly followed to maintain reliable electrical contact and thermal performance.
Select this component when designing circuits requiring MHz-level switching frequencies where standard silicon diodes exhibit excessive reverse recovery losses. The low junction capacitance makes it suitable for resonant topologies. Consider the 175°C operating capability for high-temperature environments, but ensure adequate heat sinking to manage the 48 W power dissipation rating effectively during continuous operation.
This device belongs to the DGS/DGSK family of Gallium Arsenide Schottky rectifiers manufactured by IXYS. These components utilize planar passivated chips to achieve superior high-frequency performance compared to traditional silicon rectifiers. The family includes variants with different current ratings and packaging options, all sharing the core benefits of GaAs technology such as fast switching and low leakage.
DGS 20-025A
The typical junction capacitance is 26 pF.
No, the device features temperature-independent switching behavior due to its majority carrier conduction mechanism.
The maximum repetitive peak reverse voltage (VRRM) is 250 V.
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