RF Diode DMF2344-000 product image

DMF2344-000

$7.74
  • Description:RF DIODE SCHOTTKY 2V 75MW
  • Series:-

SKU:3a811697b48f Category: Brand:

  
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DMF2344-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 2V 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DMF2344-000

  • Description:RF DIODE SCHOTTKY 2V 75MW
  • Series:-
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):2V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.15pF @ 0V, 1MHz
  • Resistance @ If, F:13Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:2-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DMF2344-000

DMF2344-000

RF Diode Overview

The DMF2344-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DME, DMF, and DMJ series. Designed for Ku-band applications (12.4 to 18.0 GHz), it functions as a single N-type low-drive device. Key electrical specifications include a maximum junction capacitance of 0.15 pF at 0 V/1 MHz, a typical series resistance of 13 Ω at 5 mA, and a breakdown voltage of 2 V at 10 μA. The forward voltage ranges from 260 mV to 330 mV at 1 mA. It operates within an ambient temperature range of -65°C to +175°C with a continuous wave power dissipation limit of 75 mW per junction.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with small low-capacitance junctions
  • Low intermodulation distortion suitable for balanced mixer configurations
  • Statistical Process Control wafer fabrication ensures uniformity and close impedance control

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • Ku-band mixers
  • Detectors
  • Modulators
  • High-speed switches

RF Diode Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet outline drawings. Confirm package type matches the required application, as the series includes singles, pairs, quads, and various internal configurations. Ensure handling procedures strictly follow industry-standard ESD precautions to prevent damage to the sensitive beam-lead structure during installation.

RF Diode Selection Notes

Select this specific part when designing for the Ku-band frequency range requiring low local oscillator drive levels. Compare the specified capacitance and series resistance against other band-specific variants in the DME, DMF, and DMJ families to ensure optimal impedance matching. Verify that the low-drive characteristic aligns with the available local oscillator power in the target circuit design.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers S, C, X, Ku, K, and Ka bands, categorized by drive level (low, medium, high) and configuration (single, pair, common cathode, anti-parallel, ring quad, bridge quad). The DMF prefix specifically denotes a low-drive N-type single diode optimized for lower LO power requirements.

RF Diode Replacement Considerations

Direct replacements within the same family require matching the frequency band and drive level. For Ku-band low-drive singles, consider the DME2333-000 (medium drive) or DMJ2824-000 (high drive). Other configurations such as pairs or quads are not direct substitutes due to differing internal topologies.

DMF2344-000DMF2344-000
$7.74
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