Diode Arrays DSEE15-06CC product image

DSEE15-06CC

  • Description:DIODE ARR GP 600V 15A ISOPLUS220
  • Series:HiPerDynFRED™

SKU:e5b270cbf142 Category: Brand:

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DSEE15-06CC is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE ARR GP 600V 15A ISOPLUS220. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DSEE15-06CC

  • Description:DIODE ARR GP 600V 15A ISOPLUS220
  • Series:HiPerDynFRED™
  • Mfr:IXYS
  • Package:Tube
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):30 ns
  • Current - Reverse Leakage @ Vr:100 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:ISOPLUS220™
  • Supplier Device Package:ISOPLUS220™
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DSEE15-06CC

DSEE15-06CC

Diode Arrays Overview

The DSEE15-06CC is a HiPerDynFRED Epitaxial Diode featuring an electrically isolated back surface in the ISOPLUS220 package. It provides a maximum repetitive reverse voltage (VRRM) of 600 V and an average forward current (IFAV) of 15 A at 115°C case temperature. The device exhibits a very short reverse recovery time (trr) of 30 ns with low peak reverse recovery current (IRM). Key electrical characteristics include a maximum RMS forward current of 35 A, a surge current rating of 110 A, and a thermal resistance from junction to case (RthJC) of 1.6 K/W.

Diode Arrays Feature Summary

  • Silicon chip mounted on a Direct-Copper-Bond substrate for high power dissipation and reliable operation
  • Electrically isolated mounting surface providing 2500 V isolation between terminals and heatsink
  • Soft reverse recovery behavior designed to minimize electromagnetic interference and switching losses
  • Planar passivated chips ensuring robust performance under avalanche conditions

Diode Arrays Applications

  • Antiparallel diodes for high-frequency switching devices
  • Free-wheeling diodes in converters and motor control circuits
  • Rectifiers in switch mode power supplies (SMPS)
  • Snubber diodes in inductive heating and ultrasonic applications

Diode Arrays Procurement Notes

Verify component authenticity through authorized IXYS or Littelfuse channels due to discontinued status. Confirm datasheet revision and manufacturing date codes against legacy inventory requirements. Ensure handling procedures respect the 2500 V isolation rating during installation. Validate that replacement components meet identical thermal and electrical specifications for existing designs.

Diode Arrays Selection Notes

Select this component for applications requiring fast recovery characteristics combined with galvanic isolation. The ISOPLUS220 package facilitates direct mounting to isolated heatsinks, simplifying thermal management in high-density designs. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the soft recovery profile to ensure compatibility with sensitive gate drive circuits in high-frequency topologies.

Diode Arrays Part Context

This part belongs to the HiPerDynFRED series of epitaxial diodes manufactured by IXYS. These devices are engineered for high-efficiency power conversion systems. The ISOPLUS220 packaging standardizes mechanical integration within industrial power modules. The series emphasizes low switching losses and high reliability for demanding electronic environments.

Diode Arrays Replacement Considerations

The official recommended replacement is DSEE29-06CC. Verify pinout compatibility and thermal interface dimensions before substitution. Ensure the substitute meets or exceeds the original 600 V rating and current handling capabilities.

Diode Arrays FAQ

What is the electrical isolation voltage of the DSEE15-06CC?

The device provides 2500 Vrms electrical isolation between the cathode/anode terminals and the isolated back surface tab.

How does the soft recovery behavior benefit circuit design?

Soft reverse recovery reduces voltage overshoot and electromagnetic interference (EMI/RFI), allowing for lower protection circuit requirements and reduced stress on commutating switches.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TVJM) is 175°C.

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