Single Bipolar Transistors FCX591QTA product image

FCX591QTA

$0.19
  • Description:TRANS PNP 60V 1A SOT-89-3
  • Series:-

SKU:f84791f3ce98 Category: Brand:

  
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FCX591QTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS PNP 60V 1A SOT-89-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FCX591QTA

  • Description:TRANS PNP 60V 1A SOT-89-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for FCX591QTA

FCX591QTA

Single Bipolar Transistors Overview

The FCX591QTA is a PNP medium power transistor manufactured by Diodes Incorporated, designed for automotive applications. It features a collector-emitter voltage (VCEO) of -60 V and a continuous collector current (IC) of -1 A. The device supports a peak pulse current (ICM) of -2 A and operates within a temperature range of -65°C to +150°C. Key electrical parameters include a collector-base breakdown voltage (VCBO) of -80 V, an emitter-base breakdown voltage (VEBO) of -7 V, and a transitional frequency (fT) of 150 MHz. It utilizes an SOT-89 package with a maximum power dissipation of 1 W at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

  • Qualified to AEC-Q101 standards for high reliability in automotive environments
  • Low equivalent on-resistance characterized by RCE(sat) of 295mΩ
  • High DC current gain (hFE) maintained up to 2A collector current
  • Totally lead-free, fully RoHS compliant, and halogen/antimony free

Single Bipolar Transistors Applications

  • Automotive electronic circuits requiring high reliability
  • General-purpose switching and amplification tasks
  • Complementary pairing with the NPN type FCX491

Single Bipolar Transistors Procurement Notes

Verify that the specific part number matches the required automotive grade specifications. Confirm compliance with AEC-Q101 standards if the application demands high reliability. Ensure the ordering suffix corresponds to the correct reel size and tape width for automated assembly processes. Check for PPAP capability requirements before finalizing procurement for automotive production lines.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -60V rating and -1A continuous current capacity is needed. Consider its low saturation resistance for efficient switching performance. Verify thermal management requirements against the specified power dissipation limits. Ensure compatibility with the complementary NPN FCX491 if push-pull configurations are utilized in the design.

Single Bipolar Transistors Part Context

This component belongs to the FCX591 series of medium power transistors from Diodes Incorporated. It is specifically engineered to meet stringent automotive industry standards. The 'Q' designation indicates qualification to AEC-Q101 standards. The 'TA' suffix denotes the specific tape and reel packaging configuration containing 1,000 units per reel.

Single Bipolar Transistors Replacement Considerations

  • FCX491TA (Complementary NPN type)

Single Bipolar Transistors FAQ

What is the maximum peak pulse current supported by the FCX591QTA?

The FCX591QTA supports a peak pulse collector current (ICM) of -2 A.

Is the FCX591QTA suitable for automotive applications?

Yes, it is qualified to AEC-Q101 standards and is PPAP capable for automotive use.

What is the DC current gain characteristic of this transistor?

The hFE is characterized up to 2A, ensuring high current gain hold up across a wide operating range.

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