FDN304P

$0.14

Description：20V 5A [email protected],2.4A 1.31W 1V 1
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a3618488a03d Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

FDN304P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Shenzhen Slkormicro Semicon Co., Ltd.. Its product description is 20V 5A [email protected],2.4A 1.31W 1V 1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDN304P

Description：20V 5A [email protected],2.4A 1.31W 1V 1
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：52mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.5 nC @ 10 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：605 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for FDN304P

FDN304P

Single FETs, MOSFETs Overview

The FDN304P is a P-Channel MOSFET utilizing leading trench technology, designed for low RDS(on) and low gate charge applications. It features a Drain-Source Breakdown Voltage (VDS) of -20 V and a continuous drain current (ID) of -2.4 A at Tc=25°C. The device operates with a maximum junction temperature of 150 °C and is housed in a SOT-23 package.

Single FETs, MOSFETs Feature Summary

Leading trench technology for low on-resistance
Low gate charge capability

Single FETs, MOSFETs Applications

Video monitor circuits
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as the provided datasheet references Slkormicro while historical records indicate Fairchild Semiconductor production. Confirm the specific revision date and marking codes to ensure alignment with your supply chain requirements and component authenticity standards.

Single FETs, MOSFETs Selection Notes

Select this component for battery-powered designs requiring efficient power switching. The low gate charge supports fast switching speeds, while the -20V rating suits low-voltage logic interfaces. Ensure thermal management accounts for the 250 °C/W junction-to-ambient resistance in surface-mount layouts.

Single FETs, MOSFETs Part Context

This part belongs to the category of discrete semiconductor transistors, specifically single N-channel or P-channel field-effect transistors. It serves as a fundamental active switching element within electronic circuitry, replacing older planar technologies with more efficient trench structures for modern portable electronics.