FJP2145TU

Single Bipolar Transistors Overview

The FJP2145TU is a P-channel power MOSFET manufactured by onsemi, housed in a TO-251 (IPAK) surface-mount package. It features a drain-source breakdown voltage of 250 V and a continuous drain current of 2 A at 25 °C. The device exhibits a maximum on-resistance of 4 Ω under specified gate drive conditions. It is designed for general-purpose switching applications requiring high voltage capability in a compact form factor.

Single Bipolar Transistors Feature Summary

• P-channel silicon MOSFET technology
• High voltage blocking capability
• Surface-mount IPAK packaging

Single Bipolar Transistors Applications

• General-purpose power switching
• Load control circuits
• Low-power motor drives

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against the manufacturer's official datasheet to ensure correct thermal and electrical specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the component matches the required package variant and temperature range for your specific design constraints.

Single Bipolar Transistors Selection Notes

Select this component when a P-channel configuration is required for high-voltage switching applications. Evaluate the 4 Ω on-resistance against your efficiency requirements and thermal management capabilities. Consider the TO-251 package for PCB space constraints while ensuring adequate copper area for heat dissipation during operation.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete power MOSFET portfolio, specifically targeting medium-voltage switching needs. It complements other devices in the series offering various voltage and current ratings within similar surface-mount packages for flexible design integration.