FQB14N30TM

Single FETs, MOSFETs Overview

The onsemi FQB14N30TM is a single N-Channel enhancement mode MOSFET utilizing QFET technology. It features a 300V drain-source breakdown voltage and a continuous drain current of 14.4A. The device exhibits a maximum on-resistance of 290 mOhms at 10V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature. Key switching parameters include a typical turn-on delay of 22ns, turn-off delay of 45ns, fall time of 70ns, and rise time of 145ns. The component is housed in a D2PAK-3 (TO-263-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

• QFET technology for optimized switching performance
• High voltage capability with 300V breakdown rating
• Low on-resistance for efficient power conduction
• Robust thermal operation up to 150°C junction temperature

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control applications
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status before design finalization as the manufacturer has indicated end-of-life conditions. Confirm availability through authorized distributors or secondary markets if immediate procurement is required. Ensure that the D2PAK-3 footprint matches your PCB layout requirements. Check RoHS compliance documentation for specific material composition declarations relevant to your manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 300V N-Channel MOSFET with moderate current handling is required. The 290 mOhm on-resistance balances conduction losses against switching capabilities. Consider the D2PAK-3 package for its thermal dissipation characteristics compared to smaller packages. Evaluate the switching times against your specific frequency requirements to ensure efficiency.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's QFET family, designed for high-efficiency power switching. The FQB series typically targets general-purpose power management applications requiring reliable performance under high voltage stress. It complements other discrete semiconductors in power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible substitutes with similar Vds and Rds(on) specifications. Verify that any replacement maintains the same TO-263-3 package outline and thermal characteristics. Ensure the alternative device meets the same operating temperature range and switching speed requirements.