G1NP02LLE

FET, MOSFET Arrays Overview

The G1NP02LLE is a dual-channel enhancement mode power MOSFET from Goford Semiconductor, integrating one N-channel and one P-channel device in an SOT-23-6L package. The NMOS supports a drain-source voltage of 20V with a continuous current of 1.3A at 25°C, while the PMOS handles -20V and -1.1A. Both channels utilize advanced trench technology for low on-resistance and gate charge. Key electrical parameters include an NMOS RDS(on) max of 210mΩ at VGS=4.5V and a PMOS RDS(on) max of 460mΩ at VGS=-4.5V. The component operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel enhancement mode MOSFETs in a single compact SOT-23-6L package.
• Utilizes advanced trench technology to achieve low on-resistance and reduced gate charge for efficient switching.
• Features identical low-side and high-side switch characteristics with matched thermal properties.

FET, MOSFET Arrays Applications

• Power switches
• DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and packaging configuration against official distributor catalogs before purchase. Confirm that the SOT-23-6L dual package marking matches the required schematic pinout for your design. Ensure compliance with RoHS standards and check for any specific ESD handling requirements during assembly.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a matched NMOS/PMOS pair in a minimal footprint. The low gate charge facilitates faster switching speeds, reducing dynamic losses in DC/DC converter designs. Verify that the 20V breakdown voltage and current ratings align with the system's maximum operating conditions and thermal dissipation capabilities.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's lineup of dual-channel power MOSFETs designed for space-constrained electronics. It serves as a complementary pair solution, simplifying circuit layouts for half-bridge or synchronous rectification topologies compared to using discrete single-channel devices.

FET, MOSFET Arrays Replacement Considerations

G1NP02E

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the NMOS channel?

The maximum continuous drain current (ID) for the NMOS channel is 1.3A at a case temperature of 25°C.

Is the device tested for avalanche robustness?

Yes, both the NMOS and PMOS channels are 100% avalanche tested to ensure reliability under transient events.

What is the typical total gate charge for the NMOS?

The typical total gate charge (Qg) for the NMOS is 1nC, measured at VDD=10V, ID=0.65A, and VGS=4.5V.