GC2X10MPS12-247

$6.19

Description：DIODE ARR SIC 1200V 50A TO247-3
Series：SiC Schottky MPS™

SKU:ad3a2f6dec61 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

GC2X10MPS12-247 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE ARR SIC 1200V 50A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for GC2X10MPS12-247

Description：DIODE ARR SIC 1200V 50A TO247-3
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：50A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：10 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for GC2X10MPS12-247

GC2X10MPS12-247

Diode Arrays Overview

The GC2X10MPS12-247 is a dual Silicon Carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a TO-247-3 package with a repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 20 A per leg at a case temperature of 100°C. The device exhibits a total capacitive charge of 106 nC, low thermal resistance of 0.91 °C/W per leg, and operates within a junction temperature range of -55 to 175°C.

Diode Arrays Feature Summary

Enhanced surge and avalanche robustness for high reliability
Temperature independent fast switching with zero reverse recovery current
Positive temperature coefficient of forward voltage enabling easy parallel operation without thermal runaway

Diode Arrays Applications

Power Factor Correction (PFC)
Solar Inverters
High Frequency Converters
Switched Mode Power Supply (SMPS)

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official GeneSiC documentation to confirm package type and compliance status. Confirm RoHS and REACH declarations directly with the manufacturer or authorized distributor before procurement. Ensure that the TO-247-3 mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency switching and reduced cooling requirements due to its superior figure of merit. Consider the positive temperature coefficient for designs involving parallel configurations to ensure balanced current sharing. Evaluate the thermal resistance and power dissipation curves relative to the expected operating case temperatures to optimize system efficiency.

Diode Arrays Part Context

This part belongs to the GeneSiC SiC Schottky MPS™ diode family, designed for high-performance power electronics. It utilizes silicon carbide technology to achieve lower forward voltage and faster switching compared to traditional silicon devices. The dual configuration in a single TO-247-3 package facilitates compact circuit board layouts for bridge and freewheeling applications.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet.

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 100 A at a case temperature of 25°C with a pulse duration of 10 ms.

Does the device exhibit reverse recovery current?

No, the device features zero reverse recovery current, which contributes to improved system efficiency and enables extremely fast switching applications.