GD2X25MPS17N

Diode Arrays Overview

The GD2X25MPS17N is a dual anode shared cathade Silicon Carbide Schottky MPS diode rated for 1700V repetitive peak reverse voltage and 50A continuous forward current per leg. It utilizes Gen4 thin chip technology to achieve low forward voltage and superior figure of merit. The device features enhanced surge and avalanche robustness, temperature-independent fast switching, and low reverse leakage current. Packaged in SOT-227 with screw mounting, it offers low thermal resistance and positive temperature coefficient characteristics.

Diode Arrays Feature Summary

• Gen4 Thin Chip Technology for Low V
• Enhanced Surge and Avalanche Robustness
• Superior Figure of Merit Q /I
• Low Thermal Resistance

Diode Arrays Applications

• EV Fast Chargers
• Solar Inverters
• Wind Energy Converters
• Train Auxiliary Power Supplies
• High Frequency Rectifiers

Diode Arrays Procurement Notes

Verify the specific datasheet revision against the manufacturer's official website before finalizing design specifications. Confirm that the SOT-227 package dimensions and mounting torque requirements align with the intended heatsink interface. Ensure compliance with RoHS and REACH directives as stated in the product documentation. Check for any updates regarding reliability data or application notes relevant to high-frequency rectification scenarios.

Diode Arrays Selection Notes

Select this component for high-voltage applications requiring robust performance under surge and avalanche conditions. The positive temperature coefficient facilitates easy paralleling without thermal runaway risks. Consider the low thermal resistance for systems demanding high power density and reduced cooling requirements. Evaluate the figure of merit for efficiency optimization in switched-mode power supplies and motor drives.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor. It represents an advancement in wide-bandgap semiconductor technology, designed to replace silicon devices in high-power applications. The dual configuration allows for efficient use in bridge circuits and other topologies requiring isolated switching elements.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The device supports up to 500 mJ of non-repetitive avalanche energy per leg when tested with L = 1.6 mH and I = 25 A.

Does the device exhibit thermal runaway risks when paralleled?

No, the GD2X25MPS17N features a positive temperature coefficient of forward voltage, allowing for easy paralleling without thermal runaway.

What is the typical switching time at 1200V?

The total switching time is less than 10 ns when tested at a reverse voltage of 1200 V.