GD2X50MPS12N

Diode Arrays Overview

The GD2X50MPS12N is a dual silicon carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a 1200 V repetitive peak reverse voltage and a continuous forward current of 100 A per leg (200 A total) at 25°C case temperature. The device utilizes Gen4 thin chip technology to achieve a superior figure of merit with a total capacitive charge of 324 nC. It operates within a junction temperature range of -55°C to 175°C and provides enhanced surge current robustness.

Diode Arrays Feature Summary

• Gen4 Thin Chip Technology for low forward voltage
• Temperature independent fast switching
• High dV/dt ruggedness
• Positive temperature coefficient of forward voltage

Diode Arrays Applications

• Electric vehicles and fast chargers
• Solar inverters
• Motor drives
• Uninterruptible power supplies

Diode Arrays Procurement Notes

Verify the specific manufacturing date code against the latest datasheet revision history, as GeneSiC updates specifications without notice. Confirm that the SOT-227 package mounting torque requirements align with your heatsink design constraints. Ensure compliance with RoHS 2 and REACH regulations if required for your target market. Validate thermal resistance parameters under your specific operating conditions.

Diode Arrays Selection Notes

Select this component when high-frequency switching and reduced cooling requirements are critical. The positive temperature coefficient facilitates easy paralleling without thermal runaway. Consider the 1200 V rating for systems requiring significant voltage headroom. Evaluate the 324 nC capacitive charge impact on system efficiency compared to standard SiC diodes.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor. It represents an evolution in silicon carbide rectifier technology, focusing on improved system reliability and power density. The dual configuration allows for compact designs in bridge or half-bridge topologies.

Diode Arrays Replacement Considerations

GD2X100MPS12N

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy per leg?

The maximum non-repetitive avalanche energy per leg is 452 mJ when measured with an inductance of 0.4 mH and a current of 50 A.

Does the GD2X50MPS12N exhibit reverse recovery current?

No, it exhibits zero reverse recovery current due to its majority carrier operation, though it has a small finite capacitive displacement current.

What is the isolation voltage specification?

The isolation voltage is 3000 V RMS for 1 second and 2500 V RMS for 60 seconds at 50/60 Hz.