GSBAV756

Diode Arrays Overview

The GSBAV756 is a silicon switching diode manufactured by Good-Ark Semiconductor, housed in an SOT-363 surface-mount package. It features a peak repetitive reverse voltage of 75 V and an average rectified output current of 150 mA. The device exhibits a maximum reverse recovery time of 4.0 ns and a total capacitance of 2.0 pF. Forward voltage ranges from 0.715 V at 1 mA to 1.25 V at 150 mA. Power dissipation is rated at 200 mW with a thermal resistance of 625 °C/W. Operating junction temperature spans -65°C to +150°C.

Diode Arrays Feature Summary

• High conductance for efficient signal handling
• Fast switching capability suitable for high-speed circuits
• Compact SOT-363 surface-mount packaging

Diode Arrays Applications

• General purpose switching applications
• High-speed switching in thick and thin-film circuits
• Full wave bridge configurations

Diode Arrays Procurement Notes

Verify the specific manufacturer datasheet for the GSBAV756 to confirm electrical parameters and mechanical dimensions before integration. Ensure compatibility with the SOT-363 footprint and validate thermal management requirements against the specified power dissipation limits. Cross-reference pinout assignments with official documentation to prevent circuit errors during assembly.

Diode Arrays Selection Notes

Select this component when a compact switching diode with low reverse recovery time is required. The SOT-363 package offers space efficiency for dense layouts. Consider the 75 V reverse voltage rating and 150 mA current capacity to ensure adequate margins for the target application's operating conditions and transient loads.

Diode Arrays Part Context

This part belongs to the family of small-signal switching diodes designed for general-purpose electronic applications. Similar devices often utilize dual-diode configurations within single packages to save board space. The SOT-363 form factor is standard for surface-mount technology, facilitating automated placement in modern manufacturing processes.

Diode Arrays Replacement Considerations

Compatible substitutes include BAV756DW and BAV756S. Verify that replacement parts match the SOT-363 package outline and meet or exceed the 75 V reverse voltage and 4 ns recovery time specifications.

Diode Arrays FAQ

What is the maximum reverse recovery time for the GSBAV756?

The maximum reverse recovery time (trr) is 4.0 ns under test conditions of IF=IR=10mA, Irr=0.1*IR, and RL=100Ω.

Can the GSBAV756 be used in full wave bridge circuits?

Yes, the datasheet explicitly states that the device can be easily connected as a full wave bridge.

What is the total capacitance of the GSBAV756?

The total capacitance (CT) is typically 2.0 pF, measured at VR=0V and f=1.0MHz.