GSBCX53-16

$0.21

Description：TRANS PNP 80V 1A SOT-89-3L
Series：-

SKU:57eba600bda5 Category: Single Bipolar Transistors Brand: Good-Ark Semiconductor

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Product introduction

GSBCX53-16 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is TRANS PNP 80V 1A SOT-89-3L. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for GSBCX53-16

Description：TRANS PNP 80V 1A SOT-89-3L
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
Power - Max：500 mW
Frequency - Transition：50MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89-3L
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for GSBCX53-16

GSBCX53-16

Single Bipolar Transistors Overview

The GSBCX53-16 is a PNP medium power transistor manufactured by Good-Ark Semiconductor, housed in an SOT-89-3L surface-mount package. It features a collector-emitter breakdown voltage of -80 V and a continuous collector current rating of -1 A. The device supports a maximum collector power dissipation of 500 mW and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 100 to 250 under specified test conditions, with a transition frequency of 50 MHz.

Single Bipolar Transistors Feature Summary

PNP polarity configuration for general-purpose switching and amplification
SOT-89-3L flat lead surface-mount plastic package design
Medium power capability with 500 mW thermal dissipation rating
High current handling up to 1 A continuous collector current

Single Bipolar Transistors Applications

Driver stages of audio amplifiers
Linear voltage regulators
High-side switches
Battery-driven devices

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm hFE binning requirements. Confirm that the SOT-89-3L package marking corresponds to the intended electrical specifications. Ensure compatibility with standard tape-and-reel handling procedures for automated assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -80 V collector-emitter voltage and 1 A current capacity is required. The GSBCX53-16 variant provides a defined hFE range of 100 to 250, suitable for applications needing consistent gain performance. Consider the SOT-89-3L footprint constraints and thermal management needs for the 500 mW dissipation rating during circuit design.

Single Bipolar Transistors Part Context

This part belongs to the GSBCX51-52-53 series of PNP transistors designed for low voltage and high current applications. The series includes NPN complements such as the GSBCX54, GSBCX55, and GSBCX56. The GSBCX53-16 specifically denotes the -80 V breakdown voltage variant with a standardized gain classification for reliable integration into general-purpose electronic circuits.

Single Bipolar Transistors Replacement Considerations

Cross-reference with GSBCX53 or GSBCX53-10 if different gain ranges are acceptable. Verify pinout compatibility for SOT-89-3L packages before substitution.