Single FETs, MOSFETs GSFC4050 product image

GSFC4050

$0.20
  • Description:MOSFET, N-CH, SINGLE, 5.00A, 40V
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:afd89b75ec4e Category: Brand:

  
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GSFC4050 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 5.00A, 40V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSFC4050

  • Description:MOSFET, N-CH, SINGLE, 5.00A, 40V
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:2.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for GSFC4050

GSFC4050

Single FETs, MOSFETs Overview

The GSFC4050 is a 40V N-Channel MOSFET manufactured by Good-Ark Semiconductor. It features a maximum drain-source voltage of 40V and a continuous drain current of 5A at 25°C case temperature. The device exhibits a maximum on-resistance of 50mΩ at VGS=10V and ID=4A, or 62mΩ at VGS=4.5V and ID=2A. Gate threshold voltage ranges from 1.1V to 2.9V. Total gate charge is typically 4.9nC with a maximum of 8nC. The component utilizes an SOT-23 package and supports a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Advanced MOSFET process technology designed for high cell density and low on-resistance.
  • Optimized for high efficiency switched mode power supplies with fast switching capabilities.
  • Features low gate charge and reverse body recovery characteristics.

Single FETs, MOSFETs Applications

  • High efficiency switched mode power supplies
  • General purpose power management applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested quantity aligns with standard carrier specifications provided in the manufacturer's order information section. Ensure compatibility with SOT-23 footprint requirements during PCB design validation.

Single FETs, MOSFETs Selection Notes

Select this component based on the required 40V breakdown voltage and 5A continuous current rating at specified case temperatures. Evaluate thermal performance using the 80 °C/W junction-to-ambient resistance value. Consider the gate charge parameters for driving circuit design to ensure efficient switching within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the discrete semiconductor category, specifically within the MOSFET product line produced by Good-Ark Semiconductor. The manufacturer specializes in diodes, rectifiers, and transistors, with automotive product lines established under their broader portfolio.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the source material.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the GSFC4050?

The maximum pulsed drain current (IDM) is 20 A.

What is the typical reverse recovery time for the internal body diode?

The typical reverse recovery time (Trr) is 20 nS when tested at VDS=25V, VGS=0V, IS=1A, and di/dt=100A/μs.

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