GT013N04D5

Single FETs, MOSFETs Overview

The GT013N04D5 is an N-channel enhancement mode MOSFET manufactured by Goford Semiconductor, designed for high-efficiency power switching applications. It utilizes TrenchFET technology to achieve low on-resistance within a compact DFN5x6 package. The device supports a drain-source voltage of 40V and delivers continuous current capabilities suitable for demanding environments. Key electrical characteristics include a maximum gate-source voltage of ±20V and a junction temperature range extending from -55°C to 150°C. This component is engineered to provide reliable performance in space-constrained designs requiring robust thermal management and efficient power conversion.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced TrenchFET technology to minimize conduction losses and enhance switching efficiency.
• Features a compact DFN5x6 footprint optimized for high-density surface mount assembly.
• Engineered for superior thermal dissipation to support sustained operation under heavy loads.

Single FETs, MOSFETs Applications

• High-current drone power systems
• FPV racing drone motor drivers
• Micro-drone power distribution units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and tape/reel configuration against the manufacturer's latest datasheet before ordering. Confirm that the DFN5x6 package dimensions match your PCB footprint requirements precisely. Ensure compatibility with standard reflow soldering profiles for lead-free assemblies. Cross-reference the part number with authorized distributors to confirm current availability status.

Single FETs, MOSFETs Selection Notes

Select this component when design constraints require a balance between high current handling and minimal board space. The DFN5x6 package offers significant weight reduction compared to traditional packages. Consider the thermal resistance characteristics if operating near maximum junction temperatures. Verify that the 40V rating provides sufficient headroom for your specific circuit voltage levels.

Single FETs, MOSFETs Part Context

This MOSFET belongs to Goford Semiconductor's 40V series specifically developed for next-generation unmanned aerial vehicles. The product line focuses on redefining performance benchmarks through ultra-compact packaging solutions. These components enable longer flight times and heavier payloads by optimizing the ratio of power density to physical size.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative DFN5x6 N-channel MOSFETs with comparable 40V ratings and similar on-resistance values only after verifying pinout compatibility and thermal specifications.