GT038P06M

$3.51

Description：MOSFET P-CH 60V 200A 350W TO-26
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:84375b7027e3 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT038P06M is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET P-CH 60V 200A 350W TO-26. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT038P06M

Description：MOSFET P-CH 60V 200A 350W TO-26
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：386 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11988 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：350W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for GT038P06M

GT038P06M

Single FETs, MOSFETs Overview

The GT038P06M is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor, utilizing advanced trench technology. It features an ultra-low on-resistance of 3.6 mΩ typ at VGS = -10V and 4.9 mΩ typ at VGS = -4.5V. The device supports a continuous drain current of -200 A and a pulsed drain current of -800 A with a drain-source voltage rating of -60 V. Packaged in TO-263, it offers a maximum power dissipation of 350 W and a junction-to-case thermal resistance of 0.36 °C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology provides excellent RDS(ON) performance and low gate charge for high efficiency.
Robust ruggedness verified through 100% avalanche testing capability.
Low thermal resistance design ensures stable operation under high power dissipation conditions.

Single FETs, MOSFETs Applications

Power switching circuits
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (A1858-V1.1) matches your design requirements. Confirm that the TO-263 package dimensions align with your PCB footprint. Ensure thermal management solutions account for the specified junction-to-case resistance during high-current operation to maintain reliability within the operating temperature range.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical at both standard (-10V) and lower (-4.5V) gate drive voltages. The high current capacity makes it suitable for applications requiring significant load handling. Verify that the -60V breakdown voltage meets the system's peak voltage stress requirements.

Single FETs, MOSFETs Part Context

This part belongs to the GT series of P-Channel MOSFETs from Goford Semiconductor. It is designed for high-efficiency power management applications where low on-resistance and high current density are required. The device is RoHS compliant and intended for industrial and automotive environments.