HN1D01FE(TE85L,F)

Diode Arrays Overview

The HN1D01FE is a silicon epitaxial planar diode array manufactured by Toshiba Semiconductor and Storage. It integrates four independent switching diodes within a single package, designed for ultra-high speed applications. The device features a maximum repetitive peak reverse voltage of 85 V and an average forward current rating of 100 mA per unit. Key electrical characteristics include a typical forward voltage of 0.92 V at 100 mA and a fast reverse recovery time of 1.6 ns. The total capacitance is typically 2.2 pF, supporting high-frequency signal processing.

Diode Arrays Feature Summary

• Integrates four independent diodes in a compact surface-mount package
• Provides ultra-fast switching performance with minimal reverse recovery delay
• Maintains low forward voltage drop to reduce power loss during conduction
• Exhibits small total capacitance suitable for high-frequency circuit operation

Diode Arrays Applications

• High-speed digital logic circuits requiring rapid signal switching
• Clamping and protection stages in RF signal paths
• Fast rectification in low-voltage DC-DC converter topologies
• Logic level shifting interfaces between disparate voltage domains

Diode Arrays Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's current catalog to confirm tape-and-reel packaging specifications. Ensure compliance with RoHS directives and confirm the absence of restricted substances prior to integration into final assemblies. Cross-reference the datasheet revision date to validate that all absolute maximum ratings and electrical characteristics remain unchanged for the production lot.

Diode Arrays Selection Notes

Select this component when circuit designs demand multiple independent switching elements within a constrained footprint. The low junction-to-case thermal resistance supports reliable operation under moderate continuous loads. Evaluate the 1.6 ns reverse recovery time against the system switching frequency to ensure minimal switching losses. Confirm that the 85 V reverse voltage rating exceeds the peak transient voltages present in the target application environment.

Diode Arrays Part Context

This device belongs to Toshiba's HN series of ultra-high speed switching diodes. These components utilize silicon epitaxial planar technology to achieve superior switching speeds compared to standard general-purpose diodes. The series is engineered for modern electronics where miniaturization and high-frequency performance are critical requirements for signal integrity and power efficiency.

Diode Arrays Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Do not assume pin-compatible alternatives from other manufacturers possess identical reverse recovery times or capacitance values without direct datasheet comparison.