HN2S02FU(TE85L,F)

Diode Arrays Overview

The HN2S02FU is a silicon epitaxial Schottky barrier diode manufactured by Toshiba Semiconductor and Storage, designed for high-speed switching applications. It integrates three independent diodes within a single package. Key electrical parameters include a maximum reverse voltage of 45 V, an average forward current of 100 mA per diode, and a typical forward voltage of 0.54 V at 100 mA. The device features a low reverse current of 5 μA maximum and operates within a temperature range of -40°C to +100°C.

Diode Arrays Feature Summary

• Comprises three independent Schottky barrier diodes in a compact surface-mount configuration
• Engineered for high-speed switching with low forward voltage characteristics
• Minimizes leakage through low reverse current specifications

Diode Arrays Applications

• High-speed switching circuits
• General-purpose rectification
• Low-voltage power management systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm reel packaging and tape-and-reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the absolute maximum ratings align with your system's operational limits to maintain reliability standards.

Diode Arrays Selection Notes

Select this component when designing circuits requiring multiple independent Schottky diodes in a minimal footprint. Consider its low forward voltage drop for improved efficiency in low-voltage applications. Evaluate the thermal dissipation requirements, as the total power rating applies to the entire package rather than individual diodes under simultaneous load conditions.

Diode Arrays Part Context

This component belongs to Toshiba's lineup of small-signal Schottky diodes intended for consumer electronics and industrial control systems. It serves as a solution for space-constrained designs needing fast recovery times and low conduction losses. The integration of three diodes reduces board space compared to using discrete components.

Diode Arrays Replacement Considerations

Consult Toshiba's official cross-reference guides or distributor databases for verified equivalent part numbers. Ensure any substitute maintains identical pinout configurations, voltage ratings, and thermal characteristics to guarantee compatibility without redesigning the circuit layout.

Diode Arrays FAQ

How is the power dissipation rating distributed among the internal diodes?

The total power dissipation rating of 200 mW applies to the entire package. When using two or three diodes simultaneously, the absolute maximum rating per diode decreases to 75% of the single-diode value.

What is the typical forward voltage at full load current?

The typical forward voltage (VF) is 0.54 V when tested at a forward current (IF) of 100 mA.

Does this device support operation in extreme cold environments?

Yes, the operating temperature range extends down to -40°C, making it suitable for various environmental conditions.