RF Diode HSMP-386J-BLKG product image

HSMP-386J-BLKG

  • Description:RF DIODE PIN 100V 2W 8QFN
  • Series:-

SKU:4b7b5fb57612 Category: Brand:

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HSMP-386J-BLKG is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE PIN 100V 2W 8QFN. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMP-386J-BLKG

  • Description:RF DIODE PIN 100V 2W 8QFN
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Bulk
  • Diode Type:PIN - 4 Pair Parallel
  • Voltage - Peak Reverse (Max):100V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1.25pF @ 50V, 1MHz
  • Resistance @ If, F:770mOhm @ 50mA, 100MHz
  • Power Dissipation (Max):2 W
  • Operating Temperature:150°C (TJ)
  • Package / Case:8-WFDFN Exposed Pad
  • Supplier Device Package:8-QFN (2x2)

RF Diode datasheet and documents for HSMP-386J-BLKG

HSMP-386J-BLKG

RF Diode Overview

The HSMP-386J-BLKG is a high power RF PIN diode manufactured by Broadcom Limited, designed for transmit/receive switching applications. It features an octal configuration with eight dies connected in parallel within a QFN 2x2mm surface mount package. The device provides low series resistance and insertion loss while maintaining high isolation. Key electrical specifications include a minimum breakdown voltage of 100V, a maximum total capacitance of 1.25pF at 1MHz, and a typical carrier lifetime of 260ns. It supports a forward current of 1A per die and handles up to 10W of power at 2GHz.

RF Diode Feature Summary

  • Octal die configuration for low series resistance
  • High power handling capability
  • Low distortion performance
  • Matched diodes for consistent results

RF Diode Applications

  • High power transmit/receive switching for cellular infrastructure
  • Two-way radio systems

RF Diode Procurement Notes

Verify the specific ordering suffix BLKG corresponds to the antistatic bag packaging containing 100 units as documented in the official datasheet. Confirm RoHS compliance status and lead-free availability directly from the manufacturer's documentation before procurement. Ensure the component meets the required thermal and electrical specifications for the intended application environment.

RF Diode Selection Notes

Select this component when high power handling and low distortion are critical requirements for RF switching circuits. The octal parallel structure makes it suitable for applications demanding low insertion loss and high isolation. Verify that the system bias currents align with the device's low bias current requirement and that the operating frequency range accommodates the specified carrier lifetime characteristics.

RF Diode Part Context

This part belongs to the HSMP-386J family of high power RF PIN diodes produced by Broadcom Limited. The BLKG suffix specifically denotes the antistatic bag packaging format containing 100 units per container. Other variants in this series may utilize tape and reel packaging options such as TR1G or TR2G for different manufacturing integration needs.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

HSMP-386J-BLKGHSMP-386J-BLKG

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