HSMS-2820-TR2G

RF Diode Overview

The HSMS-2820-TR2G is a single surface-mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a SOT-23 package with a maximum breakdown voltage of 15 V and a forward voltage of 340 mV at 0.5 mA. The device exhibits a reverse leakage current of 10 nA at 15 V and a dynamic capacitance of 100 pF at 0 V. Operating temperatures range from -65°C to +150°C, with a thermal resistance of 500°C/W.

RF Diode Feature Summary

• Low turn-on voltage for efficient signal detection
• Six-sigma quality level ensuring consistent performance
• Matched diodes in pairs and quads taken from adjacent wafer sites

RF Diode Applications

• DC biased small signal detectors up to 1.5 GHz
• Biased or unbiased large signal detectors up to 4 GHz
• Mixers and frequency multipliers up to 6 GHz

RF Diode Procurement Notes

Verify the RoHS compliance status through official documentation before integration. Confirm that the SOT-23 footprint matches your PCB layout requirements. Ensure static discharge precautions are observed during handling to prevent damage to the delicate Schottky junction.

RF Diode Selection Notes

Select this component when a single diode configuration is required for analog or digital applications. Consider the HSMS-282x family variants if matched pairs, quads, or specific isolation features like the HSMS-282K are needed for differential or high-power detector circuits.

RF Diode Part Context

This part belongs to the HSMS-282x series of surface mount RF Schottky barrier diodes. The series offers various package configurations including SOT-23, SOT-143, SOT-323, and SOT-363 to provide design flexibility. All devices in this family utilize the same optimized silicon chip technology.

RF Diode Replacement Considerations

Direct pin-to-pin replacements within the HSMS-282x family include HSMS-282B (Single), HSMS-282C (Series), and HSMS-282E (Common Anode). Verify electrical parameters such as breakdown voltage and capacitance match your specific circuit requirements before substitution.