RF Diode HSMS-2829-TR1G product image

HSMS-2829-TR1G

  • Description:RF DIODE SCHOTTKY 15V SOT-143-4
  • Series:-

SKU:f00e58ef8e84 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

HSMS-2829-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 15V SOT-143-4. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-2829-TR1G

  • Description:RF DIODE SCHOTTKY 15V SOT-143-4
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - Cross Over
  • Voltage - Peak Reverse (Max):15V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:12Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143-4

RF Diode datasheet and documents for HSMS-2829-TR1G

HSMS-2829-TR1G

RF Diode Overview

The HSMS-2829-TR1G is a surface mount RF Schottky barrier diode from the HSMS-282x series, manufactured by Broadcom Limited. It features a Cross-over Quad configuration within an SOT-363 package, designed for analog and digital applications including mixing, detecting, switching, sampling, clamping, and wave shaping. The device utilizes silicon technology with a maximum breakdown voltage of 15 V and a forward voltage of 340 mV at 0.5 mA. It exhibits a reverse leakage current of 10 nA at 15 V and a capacitance of 1 pF at 0 V. The component operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Cross-over quad configuration enables planar double balanced mixer designs without requiring via holes in the RF circuit.
  • Special lead frame allows internal crossover placement within the plastic package for simplified layout.
  • Matched diodes taken from adjacent wafer sites ensure high consistency and performance.

RF Diode Applications

  • Planar double balanced mixers operating up to 6 GHz
  • RF signal detection and sampling circuits
  • Clamping and wave shaping applications

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for End-of-Life notices or Production Change Notices prior to final design approval. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during assembly.

RF Diode Selection Notes

Select this part when a planar implementation of a double balanced mixer is required to avoid PCB vias in the RF path. The cross-over quad topology simplifies circuit layout compared to open ring quads that require external trace connections. Verify that the 15 V breakdown voltage meets the peak inverse voltage requirements of the specific application environment.

RF Diode Part Context

This component belongs to the HSMS-282x family of surface mount RF Schottky barrier diodes. The family offers various configurations such as single, dual, and quad versions in SOT-23, SOT-143, SOT-323, and SOT-363 packages. The HSMS-282x series is optimized for general-purpose RF applications featuring low series resistance and low forward voltage.

RF Diode Replacement Considerations

HSMS-282R serves as a functional alternative for mixer applications but requires external board traces to close the ring quad configuration, unlike the internal crossover of the HSMS-2829.

HSMS-2829-TR1GHSMS-2829-TR1G

Click on the inquiry

Recent News