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HUF75343S3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 75A D2PAK. Review the specifications below when checking this part for your BOM.
The HUF75343S3ST is an N-Channel UltraFET Power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It utilizes the TO-263AB (D2PAK) surface-mount package with a tape-and-reel suffix 'T'. The device features a drain-to-source voltage of 55 V and a continuous drain current of 75 A at 25°C case temperature. The maximum drain-to-source on-resistance is 0.009 Ω at VGS = 10V and ID = 75A. It supports a junction temperature range from -55°C to +175°C and offers thermal impedance characteristics suitable for high-power switching applications.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for lifecycle changes as this part may be discontinued. Ensure proper handling for ESD-sensitive components during storage and assembly.
Select based on required voltage rating and current capacity. Consider thermal management requirements given the power dissipation limits. Verify gate drive compatibility with the specified threshold voltage. Evaluate PCB layout constraints for the TO-263AB package.
This component belongs to the HUF75343 series of N-Channel Power MOSFETs. Other variants include HUF75343G3 (TO-247), HUF75343P3 (TO-220AB), and HUF75343S3 (TO-262AA). The S3ST variant specifically denotes the D2PAK package in tape-and-reel format.
Direct substitutes within the same family include HUF75343S3 (same package, different reel option). Cross-package replacements like HUF75343P3 require mechanical adaptation. Verify pinout compatibility and thermal resistance differences when substituting.
The maximum drain-to-source breakdown voltage (BV_DSS) is 55 V.
Yes, the 'T' suffix in HUF75343S3ST indicates it is available in a tape-and-reel configuration.
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