Single FETs, MOSFETs HUF75343S3ST product image

HUF75343S3ST

  • Description:MOSFET N-CH 55V 75A D2PAK
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:735a5a0725b8 Category: Brand:

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HUF75343S3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 75A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75343S3ST

  • Description:MOSFET N-CH 55V 75A D2PAK
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:205 nC @ 20 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):270W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for HUF75343S3ST

HUF75343S3ST

Single FETs, MOSFETs Overview

The HUF75343S3ST is an N-Channel UltraFET Power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It utilizes the TO-263AB (D2PAK) surface-mount package with a tape-and-reel suffix 'T'. The device features a drain-to-source voltage of 55 V and a continuous drain current of 75 A at 25°C case temperature. The maximum drain-to-source on-resistance is 0.009 Ω at VGS = 10V and ID = 75A. It supports a junction temperature range from -55°C to +175°C and offers thermal impedance characteristics suitable for high-power switching applications.

Single FETs, MOSFETs Feature Summary

  • Manufactured using the UltraFET process technology to achieve low on-resistance per silicon area.
  • Capable of withstanding high energy in avalanche mode.
  • Exhibits very low reverse recovery time and stored charge in the body diode.
  • Includes simulation models for PSPICE and SABER.

Single FETs, MOSFETs Applications

  • Switching regulators
  • Motor drivers
  • Relay drivers
  • Low-voltage bus switches

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for lifecycle changes as this part may be discontinued. Ensure proper handling for ESD-sensitive components during storage and assembly.

Single FETs, MOSFETs Selection Notes

Select based on required voltage rating and current capacity. Consider thermal management requirements given the power dissipation limits. Verify gate drive compatibility with the specified threshold voltage. Evaluate PCB layout constraints for the TO-263AB package.

Single FETs, MOSFETs Part Context

This component belongs to the HUF75343 series of N-Channel Power MOSFETs. Other variants include HUF75343G3 (TO-247), HUF75343P3 (TO-220AB), and HUF75343S3 (TO-262AA). The S3ST variant specifically denotes the D2PAK package in tape-and-reel format.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include HUF75343S3 (same package, different reel option). Cross-package replacements like HUF75343P3 require mechanical adaptation. Verify pinout compatibility and thermal resistance differences when substituting.

Single FETs, MOSFETs FAQ

What is the maximum drain-to-source breakdown voltage?

The maximum drain-to-source breakdown voltage (BV_DSS) is 55 V.

Is the HUF75343S3ST available in a tape-and-reel package?

Yes, the 'T' suffix in HUF75343S3ST indicates it is available in a tape-and-reel configuration.

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