IAUS240N08S5N019ATMA1

Single FETs, MOSFETs Overview

The IAUS240N08S5N019ATMA1 is an automotive-grade N-channel enhancement mode power transistor from Infineon's OptiMOS™-5 family. It features a PG-HSOG-8-1 package with a drain tab for efficient thermal management. The device supports a maximum drain-source voltage of 80 V and delivers a continuous drain current of 240 A at 25°C case temperature. Its maximum on-state resistance is 1.9 mΩ at VGS=10V, ensuring low conduction losses. It operates within a junction temperature range of -55°C to +175°C and is qualified under AEC standards.

Single FETs, MOSFETs Feature Summary

• AEC qualified for automotive reliability requirements
• Ultra-low Rds(on) for high efficiency power switching
• 100% avalanche tested for robust transient performance
• MSL1 rated up to 260°C peak reflow temperature

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-current DC-DC converter stages
• Motor control applications requiring high pulse currents

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the required gate drive voltage aligns with the specified threshold and plateau voltages for optimal switching performance in your target circuit design.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling capabilities combined with low on-resistance in a compact surface-mount form factor. Consider the thermal resistance characteristics and safe operating area limits when determining heat dissipation strategies for high-duty-cycle operations.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™-5 series, representing advanced silicon technology optimized for automotive environments. It integrates high-performance switching capabilities with ruggedness features like avalanche testing, making it suitable for demanding power electronics applications where reliability and efficiency are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains compatible pinout configurations, voltage ratings, and thermal characteristics to avoid redesigning the PCB layout or driver circuitry.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current capability?

The device can handle a pulsed drain current of 960 A at a case temperature of 25°C.

Is the component suitable for high-temperature soldering processes?

Yes, it is MSL1 rated and can withstand peak reflow temperatures up to 260°C.

How does the on-state resistance vary with gate voltage?

The maximum Rds(on) is 3.0 mΩ at VGS=6V and reduces to a maximum of 1.9 mΩ at VGS=10V.