IGB110S10S1XTMA1

$1.91

Description：MV GAN DISCRETES
Series：CoolGaN™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:382e69630a3a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IGB110S10S1XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MV GAN DISCRETES. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IGB110S10S1XTMA1

Description：MV GAN DISCRETES
Series：CoolGaN™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 5V
Vgs(th) (Max) @ Id：2.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：3.4 nC @ 5 V
Vgs (Max)：±6.5V
Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 15W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSON-4-2
Package / Case：4-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IGB110S10S1XTMA1

IGB110S10S1XTMA1

Single FETs, MOSFETs Overview

The IGB110S10S1 is a CoolGaN transistor featuring a 100 V drain-source voltage and a typical on-state resistance of 9.4 mΩ. It supports a continuous drain current of 23 A at 25°C, with a pulsed drain current capability of 210 A. The device exhibits an output charge of 14 nC and a total gate charge of 3.4 nC. It utilizes a PG-TSON-4 package with an exposed die for top-side thermal management.

Single FETs, MOSFETs Feature Summary

Ultra-fast switching and high efficiency
Space-saving and highly robust package
No reverse recovery charge
Ultra-low gate charge and output charge
Exposed die for top-side thermal excellence

Single FETs, MOSFETs Applications

Telecom & datacenter 48V IBC
Sync rectification for AC-DC and DC-DC converters
Robotics and drones
Battery powered tools
48V servo drive

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering code against official Infineon documentation to ensure correct package type and revision level. Confirm industrial grade qualification status and JEDEC compliance requirements prior to integration into final designs.

Single FETs, MOSFETs Selection Notes

Evaluate thermal performance using the specified junction-to-case and junction-to-ambient thermal resistance values. Ensure operating conditions remain within the recommended gate-source voltage limits and do not exceed maximum ratings for optimal lifetime.

Single FETs, MOSFETs Part Context

This component belongs to the CoolGaN G3 series from Infineon Technologies. It is designed for industrial applications and fully qualified according to JEDEC standards. The device integrates advanced GaN technology for improved power density and switching performance.