IMBG65R022M1HXTMA1

$12.75

Description：SILICON CARBIDE MOSFET PG-TO263-
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6451818eb588 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IMBG65R022M1HXTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SILICON CARBIDE MOSFET PG-TO263-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IMBG65R022M1HXTMA1

Description：SILICON CARBIDE MOSFET PG-TO263-
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：30mOhm @ 41.1A, 18V
Vgs(th) (Max) @ Id：5.7V @ 12.3mA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 18 V
Vgs (Max)：+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2288 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-7-12
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Single FETs, MOSFETs datasheet and documents for IMBG65R022M1HXTMA1

IMBG65R022M1HXTMA1

Single FETs, MOSFETs Overview

The IMBG65R022M1H is a CoolSiC™ MOSFET 650 V G1 device in PG-TO263-7 package. Key parameters include VDS of 650 V, RDS(on) typ 22 mΩ and max 30 mΩ at 25°C, QG typ 67 nC, and IDM,max 194 A. It supports Tj up to 175°C, features Kelvin source for reduced switching losses, and offers optimized switching behavior with commutation robust fast body diode.

Single FETs, MOSFETs Feature Summary

Kelvin source pin configuration provides up to 4 times lower switching losses compared to standard configurations.
Commutation robust fast body diode with low forward recovery charge (Qfr).
Superior gate oxide reliability suitable for harsh operations.
Compatible with standard drivers.

Single FETs, MOSFETs Applications

Telecom and Server SMPS
UPS (uninterruptable power supplies)
Solar PV inverters
EV charging infrastructure
Energy storage and battery formation

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct package and tape/reel specifications. Confirm JEDEC industrial qualification status if required for your application environment. Check for any recent datasheet revisions that may impact parameter values or thermal characteristics before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency applications requiring low conduction losses and robust avalanche capability. The PG-TO263-7 package facilitates surface mount integration. Ensure driver compatibility with the recommended turn-on voltage of 18 V and turn-off voltage of 0 V for optimal performance and lifetime.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolSiC™ M1 generation of 650 V silicon carbide MOSFETs. It leverages wide bandgap SiC material characteristics to deliver high performance and reliability. The device is fully qualified according to JEDEC standards for industrial applications, ensuring suitability for demanding environments.