IMCQ120R005M2HXTMA1

Single FETs, MOSFETs Overview

The IMCQ120R005M2HXTMA1 is a CoolSiC G2 discrete MOSFET with a 1200 V drain-source breakdown voltage. It features a top-side cooled Q-DPAK (PG-HDSOP-22) package for enhanced thermal management. The device supports an N-channel enhancement mode configuration with a maximum continuous drain current of 342 A at 25°C. Key electrical parameters include a typical on-resistance of 5.3 mΩ, a gate charge of 261 nC, and a forward transconductance of 91 S. It operates within a junction temperature range up to 175°C and offers high power dissipation capabilities.

Single FETs, MOSFETs Feature Summary

• Top-side cooled Q-DPAK package design for efficient heat transfer
• Second-generation CoolSiC technology for optimized switching performance
• High current handling capability suitable for demanding power applications

Single FETs, MOSFETs Applications

• Electric vehicle traction inverters
• On-board chargers
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and supply chain integrity.

Single FETs, MOSFETs Selection Notes

Select this component for high-power density designs requiring low conduction losses and robust thermal performance. Evaluate the trade-off between the low on-resistance and gate charge characteristics against the specific switching frequency requirements of the target application circuit.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolSiC G2 family, representing advanced silicon carbide technology. It utilizes the PG-HDSOP-22 package variant designed for top-side cooling, distinguishing it from standard surface-mount packages by facilitating direct thermal interface to heatsinks.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified equivalents. Ensure any alternative maintains compatibility with the Q-DPAK footprint and meets the 1200 V rating.