IPAN60R125PFD7SXKSA1

$2.35

Description：MOSFET N-CH 650V 25A TO220
Series：CoolMOS™PFD7
Mfr：Infineon Technologies
Package：Tube

SKU:8428ef976709 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IPAN60R125PFD7SXKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 25A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPAN60R125PFD7SXKSA1

Description：MOSFET N-CH 650V 25A TO220
Series：CoolMOS™PFD7
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id：4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1503 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：32W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-FP
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for IPAN60R125PFD7SXKSA1

IPAN60R125PFD7SXKSA1

Single FETs, MOSFETs Overview

The IPAN60R125PFD7S is a 600V CoolMOS PFD7 Superjunction N-channel power MOSFET manufactured by Infineon Technologies. It utilizes PG-TO 220 FullPAK narrow lead packaging for through-hole mounting. Key electrical parameters include a drain-source breakdown voltage of 600 V, a maximum on-state resistance of 125 mΩ at 25°C, and a typical total gate charge of 36 nC. The device supports a continuous drain current of 16 A at 100°C case temperature and a pulsed drain current of 66 A. Thermal characteristics specify a junction-to-case thermal resistance of 3.92 °C/W and a junction-to-ambient thermal resistance of 80 °C/W in leaded configurations.

Single FETs, MOSFETs Feature Summary

Optimized low figure-of-merit performance combining low RDS(on) with low Qg and Eoss to minimize switching losses.
Fast internal body diode featuring high commutation ruggedness and rapid recovery characteristics.
High dv/dt capability ensuring robust operation under fast switching conditions.

Single FETs, MOSFETs Applications

Zero Voltage Switching (ZVS) topologies
High-density chargers and adapters
Lighting systems
Motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant matches the PG-TO 220 FullPAK narrow lead designation. Confirm that the application environment remains within the specified operating junction temperature range of -40°C to 150°C. Ensure proper mounting torque does not exceed 50 Ncm for M2.5 screws. Validate thermal management design against the provided junction-to-ambient resistance values.

Single FETs, MOSFETs Selection Notes

Select this component when designing cost-sensitive consumer electronics requiring high power density. The device is suitable for applications demanding efficient switching at higher frequencies. Consider the pulse current rating of 66 A for transient load handling. Evaluate the avalanche energy capabilities if unclamped inductive loads are present in the circuit topology.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS PFD7 series, an optimized platform designed for cost-sensitive consumer markets. It represents the latest generation of Superjunction technology from Infineon, focusing on ease of use and excellent price-performance ratios. The series enables slim designs through high efficiency standards.