IPB024N08NF2SATMA1

Single FETs, MOSFETs Overview

The IPB024N08NF2SATMA1 is a StrongIRFET™ 2 N-channel power MOSFET in a PG-TO263-3 package. It features an 80 V drain-source breakdown voltage and a maximum on-state resistance of 2.4 mΩ at VGS=10 V. The device supports a continuous drain current of 107 A at TC=25°C and a pulsed current of 428 A. Key dynamic parameters include a total gate charge of 89 nC, output charge of 105 nC, and reverse recovery time of 39 ns. Thermal performance includes a junction-to-case resistance of 1.0 °C/W.

Single FETs, MOSFETs Feature Summary

• StrongIRFET™ 2 technology optimized for wide application ranges
• 100% avalanche tested for enhanced reliability
• Lead-free plating compliant with RoHS standards
• Halogen-free construction per IEC61249-2-21

Single FETs, MOSFETs Applications

• Server power solutions
• Telecommunications infrastructure
• Switching mode power supplies (SMPS)
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the component matches the PG-TO263-3 footprint dimensions provided in the datasheet outline. Confirm that the manufacturer's part number corresponds exactly to the requested model before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses within an 80 V rating range. The 2.4 mΩ RDS(on) maximizes efficiency in high-current scenarios. Evaluate thermal management requirements based on the 1.0 °C/W junction-to-case resistance. Consider the 428 A pulsed current capability for handling transient load spikes effectively.

Single FETs, MOSFETs Part Context

This component belongs to the StrongIRFET™ 2 family, designed for high-performance switching applications. It utilizes advanced silicon technology to achieve superior figure-of-merit values compared to standard MOSFETs. The product line targets industrial and automotive sectors demanding robust power density and thermal stability.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 80 V rating, PG-TO263-3 package, and electrical characteristics.