IPB070N06N G

Description：MOSFET N-CHAN D2PAK
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:fed793156e42 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IPB070N06N G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CHAN D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB070N06N G

Description：MOSFET N-CHAN D2PAK
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id：4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs：126 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：4300 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB070N06N G

IPB070N06N G

Single FETs, MOSFETs Overview

The IPB070N06N G is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a maximum drain-source voltage of 60 V and a continuous drain current of 70 A at 25 °C. The device exhibits a typical on-state resistance of 7 mΩ at a gate-source voltage of 10 V. Thermal characteristics include a junction-to-case thermal resistance of 1.8 K/W. The component supports a maximum power dissipation of 136 W and operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

OptiMOS technology provides low on-state resistance for high efficiency
Enhanced avalanche ruggedness for robust operation under transient conditions
Lead-free plating compliant with industrial environmental standards

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control systems
Power supply switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the IPB070N06N G designation covers multiple packages including PG-TO-263-3, PG-TO-220-3, and PG-TO-262-3. Confirm that the ordering suffix matches the desired physical footprint and marking code before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rating and approximately 70 A continuous current capability are required. Ensure the application design accounts for the 7 mΩ on-resistance to manage conduction losses effectively. Verify that the thermal management solution can handle the specified 136 W power dissipation limits under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS product family designed for general-purpose power switching. It serves as a silicon-based alternative to other voltage ratings within the same series, offering a balance between low on-resistance and fast switching speeds suitable for medium-power electronic designs.