IPB60R380P6ATMA1

Single FETs, MOSFETs Overview

The IPB60R380P6ATMA1 is a single N-channel CoolMOS P6 power transistor manufactured by Infineon Technologies. It utilizes superjunction technology to achieve high efficiency in switching applications. The device features a PG-TO 263-3 (D²PAK) surface-mount package with an exposed tab for thermal management. Key electrical parameters include a drain-source breakdown voltage of 650 V, a maximum on-state resistance of 380 mΩ at 10 V gate drive, and a typical total gate charge of 19 nC. It supports a continuous drain current of 10.6 A at 25°C case temperature and a pulsed drain current of 29 A.

Single FETs, MOSFETs Feature Summary

• Employs CoolMOS P6 superjunction technology for extremely low conduction and switching losses.
• Features increased MOSFET dv/dt ruggedness and very high commutation capability.
• Designed for easy driving with optimized gate characteristics.
• Qualified for industrial grade applications according to JEDEC standards.

Single FETs, MOSFETs Applications

• Power Factor Correction (PFC) stages
• Hard switching PWM stages
• Resonant switching stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'ATMA1' against the manufacturer's official documentation to confirm tape-and-reel packaging and lead-free plating specifications. Ensure the component matches the PG-TO 263-3 package outline dimensions provided in the datasheet. Confirm that the part number corresponds to the CoolMOS P6 series rather than other generations like C6 or P7, as electrical characteristics differ significantly between families.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust performance in high-voltage switching environments. The low figure of merit (Rdson*Qg) makes it suitable for applications prioritizing energy efficiency. Consider the thermal resistance values when designing heat dissipation strategies, particularly for continuous operation near the maximum junction temperature limit of 150°C.

Single FETs, MOSFETs Part Context

This transistor belongs to the Infineon CoolMOS P6 family, which represents a generation of high-voltage power MOSFETs designed using superjunction principles. The 'IPB' prefix indicates the D²PAK (PG-TO 263-3) surface-mount package variant within this product line. This family is engineered to balance high switching speed with ease of use, targeting modern power conversion architectures.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.