IPB70N10S312ATMA2

$1.09

Description：MOSFET_(75V 120V(
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:d50eff84ec67 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB70N10S312ATMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(75V 120V(. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB70N10S312ATMA2

Description：MOSFET_(75V 120V(
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11.6mOhm @ 70A, 10V
Vgs(th) (Max) @ Id：4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4355 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB70N10S312ATMA2

IPB70N10S312ATMA2

Single FETs, MOSFETs Overview

The IPB70N10S3-12 is an N-channel OptiMOS-T power transistor in a PG-TO263-3-2 package. It features a drain-source voltage of 100 V and a continuous drain current of 70 A at 25 °C case temperature. The maximum on-state resistance is 11.3 mΩ, with a gate threshold voltage ranging from 2.0 V to 4.0 V. Total gate charge is up to 66 nC. The device supports a junction temperature up to 175 °C and has a thermal resistance junction-to-case of 1.2 K/W.

Single FETs, MOSFETs Feature Summary

Automotive AEC-Q101 qualified for high reliability
OptiMOS-T technology for low conduction losses
100% avalanche tested for robustness
Enhancement mode operation

Single FETs, MOSFETs Applications

Automotive power switching applications
General purpose power conversion
High efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm component authenticity through authorized distribution channels. Check datasheet revision history for any updates to electrical characteristics or mechanical dimensions prior to final design implementation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring automotive-grade reliability and high current handling capabilities. Ensure the PCB layout accommodates the PG-TO263-3-2 package footprint. Evaluate thermal management requirements based on the specified thermal resistance values and expected operating temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-T family of power transistors manufactured by Infineon Technologies. It is designed to provide efficient power switching solutions with optimized performance characteristics for modern electronic systems.