IPB80N06S3L-05

Description：MOSFET N-CH 55V 80A TO263-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:629568699fb4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB80N06S3L-05 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 80A TO263-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB80N06S3L-05

Description：MOSFET N-CH 55V 80A TO263-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 69A, 10V
Vgs(th) (Max) @ Id：2.2V @ 115µA
Gate Charge (Qg) (Max) @ Vgs：273 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：13060 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：165W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB80N06S3L-05

IPB80N06S3L-05

Single FETs, MOSFETs Overview

The IPB80N06S3L-05 is an N-channel enhancement mode OptiMOS-T2 power transistor designed for automotive applications. It features a PG-TO263-3-2 package with a maximum drain-source voltage of 55 V and a continuous drain current of 80 A at 25 °C. The device exhibits a maximum on-state resistance of 4.5 mΩ at VGS=10 V. It supports a junction temperature range from -55 °C to +175 °C, offers 165 W power dissipation, and includes avalanche testing certification.

Single FETs, MOSFETs Feature Summary

Automotive AEC-Q101 qualified for high reliability
OptiMOS-T2 technology providing low on-state resistance
100% avalanche tested for robust performance
Green product compliant with RoHS standards

Single FETs, MOSFETs Applications

Automotive power distribution systems
Motor control circuits
High-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct package variant and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification level for your target automotive application before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 55 V N-channel MOSFET with high current handling capability is required. Ensure the gate drive voltage supports the specified RDS(on) conditions. Consider the thermal resistance characteristics and PCB footprint requirements associated with the PG-TO263-3-2 package during circuit layout design.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-T2 family of power transistors manufactured by Infineon Technologies. It is specifically engineered for demanding automotive environments, offering enhanced ruggedness compared to standard industrial components. The product line emphasizes efficiency and durability in power management solutions.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IPI80N06S3L-05 (PG-TO262-3-1) and IPP80N06S3L-05 (PG-TO220-3-1). Verify pinout compatibility and thermal interface requirements when substituting between these package variants.