Single FETs, MOSFETs IPI024N06N3GHKSA1 product image

IPI024N06N3GHKSA1

  • Description:MOSFET N-CH 60V 120A TO262-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:d3a5ca050671 Category: Brand:

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IPI024N06N3GHKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 120A TO262-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPI024N06N3GHKSA1

  • Description:MOSFET N-CH 60V 120A TO262-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:4V @ 196µA
  • Gate Charge (Qg) (Max) @ Vgs:275 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):250W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO262-3
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IPI024N06N3GHKSA1

IPI024N06N3GHKSA1

Single FETs, MOSFETs Overview

The IPI024N06N3GHKSA1 is an N-channel Power MOSFET from Infineon Technologies, part of the OptiMOS™ 3 family. It features a 60V drain-to-source voltage rating and a continuous drain current of 120A. The device utilizes advanced trench technology to achieve low on-resistance and optimized gate charge characteristics. Designed for high-frequency switching applications, it offers robust performance in synchronous rectification and DC/DC converter circuits. The component is housed in a TO-262-3 package, suitable for surface-mount assembly.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-frequency switching and synchronous rectification
  • Advanced trench technology for low conduction losses
  • Designed for efficient DC/DC conversion applications

Single FETs, MOSFETs Applications

  • Synchronous rectification in power supplies
  • DC/DC converter circuits
  • High-frequency switching applications

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix HKSA1 against official Infineon documentation to confirm package type and tape/reel specifications. Confirm product status as obsolete before design-in. Request the latest Product Qualification Report and datasheet directly from authorized distributors or Infineon to ensure compliance with current manufacturing standards and availability constraints.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 60V blocking capability and high current handling up to 120A. Consider the TO-262-3 package for thermal management needs. Evaluate gate charge parameters for switching frequency requirements. Ensure compatibility with existing PCB footprints designed for this specific package style when replacing older designs.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ 3 series, which focuses on improving efficiency in power conversion systems. The series is characterized by reduced gate charge and low on-state resistance compared to previous generations. This specific model targets automotive and industrial power supply markets where reliability and switching speed are critical.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes listed in Infineon's cross-reference tools. Verify pinout compatibility and thermal characteristics if substituting with other TO-262-3 packages. Ensure replacement parts meet the same 60V and 120A ratings.

IPI024N06N3GHKSA1IPI024N06N3GHKSA1

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