IPI80N08S406AKSA1

Single FETs, MOSFETs Overview

The IPI80N08S4-06 is an N-channel enhancement mode OptiMOS-T2 power transistor designed for automotive applications. It features a PG-TO262-3-1 package and supports a drain-source voltage of 80 V with a maximum continuous drain current of 80 A at 25°C. The device exhibits a typical on-state resistance of 5.0 mΩ at VGS=10V and ID=80A, alongside a total gate charge of 52 nC. It operates within a temperature range of -55°C to +175°C and includes avalanche testing.

Single FETs, MOSFETs Feature Summary

• Qualified under the AEC-Q101 standard for automotive reliability
• Capable of handling single-pulse avalanche energy up to 270 mJ
• Features green product construction compliant with RoHS standards
• Supports peak reflow temperatures up to 260°C with MSL1 classification

Single FETs, MOSFETs Applications

• Automotive power switching circuits
• High-current DC-DC converter stages
• Motor control applications requiring robust thermal performance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant, as the datasheet covers multiple part numbers sharing the same electrical characteristics but differing in physical housing. Confirm that the application environment remains within the specified junction temperature limits and that PCB layout adheres to the thermal resistance guidelines provided for the TO262 package.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V rating and high current capacity are required in a through-hole compatible surface mount package. The OptiMOS-T2 technology provides low conduction losses suitable for efficiency-critical designs. Ensure the gate drive voltage meets the 10 V requirement for optimal RDS(on) performance and verify that the PCB copper area supports the necessary heat dissipation.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS-T2 family, which utilizes trench MOSFET technology to balance low on-resistance with fast switching speeds. The IPI80N08S4-06 specifically targets the automotive sector, offering enhanced ruggedness compared to industrial-grade counterparts while maintaining compatibility with standard manufacturing processes.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IPB80N08S4-06 (PG-TO263-3-2 package) and IPP80N08S4-06 (PG-TO220-3-1 package). These variants share identical electrical specifications but require different footprint considerations during board design.