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IPI80P03P4L07AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 80A TO262-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPI80P03P4L07AKSA1
- Description：MOSFET P-CH 30V 80A TO262-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：+5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds：5700 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：88W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO262-3
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for IPI80P03P4L07AKSA1
Single FETs, MOSFETs Overview
The IPI80P03P4L-07 is a P-channel OptiMOS-P2 power transistor designed for automotive applications. It features a PG-TO262-3-1 package and supports continuous drain currents of -80 A at 25°C and pulsed currents up to -320 A. The device operates with a maximum drain-source voltage of -30 V and maintains an on-state resistance as low as 6.9 mΩ at VGS=-10V. It includes avalanche testing, logic-level gate drive capability, and a junction temperature range from -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Logic-level enhancement mode operation suitable for direct microcontroller or driver interface
- AEC-Q101 qualified for high reliability in automotive environments
- Robust thermal performance with 175°C operating temperature capability
- 100% avalanche tested for enhanced ruggedness under transient conditions
Single FETs, MOSFETs Applications
- Reverse battery protection circuits
- Automotive load switching
- Powertrain control modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required package variant (PG-TO262-3-1). Confirm that the component meets the necessary AEC-Q101 qualification standards for your target automotive application. Ensure thermal management designs account for the specified RthJC values during high-current operation.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel solution is required for 30V automotive systems. The logic-level gate threshold simplifies driver design compared to standard threshold devices. Consider the TO262 package footprint constraints and verify PCB copper area requirements for optimal thermal dissipation.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS-P2 family, which utilizes trench technology for low on-resistance. It shares characteristics with the IPB and IPP variants, differing primarily in the surface-mount TO262 package configuration. The series targets robust automotive power switching needs.
Single FETs, MOSFETs Replacement Considerations
Direct pin-compatible alternatives within the same OptiMOS-P2 family include IPB80P03P4L-07 (TO263) and IPP80P03P4L-07 (TO220). Verify package dimensions and thermal resistance differences before substitution.
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